b. Guaranteed by design, not subject to production testing.
Document Number: 71625
S09-0227-Rev. E, 09-Feb-09
www.vishay.com
1
Si7850DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3.8 A, dI/dt = 100 A/µs
V
DD
= 30 V, R
L
= 30
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
0.5
V
DS
= 30 V, V
GS
= 10 V, I
D
= 10.3 A
18
3.4
5.3
1.4
10
10
25
12
50
2.2
20
20
50
24
80
ns
Ω
27
nC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10.3 A
V
GS
= 4.5 V, I
D
= 8.7 A
V
DS
= 15 V, I
D
= 10.3 A
I
S
= 3.8 A, V
GS
= 0 V
40
0.018
0.025
26
0.85
1.2
0.022
0.031
60
1
3
± 100
1
20
V
nA
µA
A
Ω
S
V
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71625.
www.vishay.com
4
Document Number: 71625
S09-0227-Rev. E, 09-Feb-09
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK
®
SO-8, (Single/Dual)
H
W
M
1
2
2
D1
D
3
4
L1
E3
θ
θ
L
E2
E4
K
D4
θ
1
2
Z
D2
e
D
D5
3
4
θ
b
b
L
1
D1
2
K1
D5
3
D2
4
A1
c
Detail Z
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3.
Dimensions exclusive of mold flash and cutting burrs.
D2
D3 (2x) D4
2
E1
E
A
Backside View of Single Pad
H
K
E2
E4
E3
Backside View of Dual Pad
DIM.
A
A1
b
c
D
D1
D2
D3
D4
D5
E
E1
E2
E3
E4
e
K
K1
H
L
L1
W
M
MILLIMETERS
MIN.
0.97
0.33
0.23
5.05
4.80
3.56
1.32
NOM.
1.04
-
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.66
3.78
0.75 typ.
1.27 BSC
1.27 typ.
-
0.61
0.61
0.13
-
0.25
0.125 typ.
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
MIN.
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
INCHES
NOM.
0.041
-
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.144
0.149
0.030 typ.
0.050 BSC
0.050 typ.
-
0.024
0.024
0.005
-
0.010
0.005 typ.
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.05
5.79
3.48
3.68
6.25
5.99
3.84
3.91
0.238
0.228
0.137
0.145
0.246
0.236
0.151
0.154
0.56
0.51
0.51
0.06
0°
0.15
-
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
-
0.028
0.028
0.008
12°
0.014
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
Revison: 13-Feb-17
1
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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