MQSMCGLCE13TR datasheet, PDF - EEWORLD Datasheet

MQSMCGLCE13TR: Description1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB; CategoryDiscrete semiconductor diode; File Size726KB，7 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MQSMCGLCE13TR Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	DO-215AB
package instruction	R-PDSO-G2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
Maximum breakdown voltage	17.6 V
Minimum breakdown voltage	14.4 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-215AB
JESD-30 code	R-PDSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Not Qualified
Guideline	MIL-19500
Maximum repetitive peak reverse voltage	13 V
surface mount	YES
technology	AVALANCHE
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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