MOSFET 100V Single N-Channel HEXFET
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Vishay |
| Parts packaging code | DIP |
| package instruction | IN-LINE, R-PDIP-T4 |
| Contacts | 4 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Samacsys Description | MOSFET P-Channel 100V 1A HVMDIP4 Vishay IRFD9120PBF P-channel MOSFET Transistor, 1 A, 100 V, 4-Pin HVMDIP |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 140 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 1 A |
| Maximum drain-source on-resistance | 0.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDIP-T4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum pulsed drain current (IDM) | 8 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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