SFH-309-4 datasheet, PDF - EEWORLD Datasheet

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SFH-309-4: DescriptionFerrite Clamp On Cores BB Freq 43u002644 Mat 270Ohm @250MHz Round; CategoryLED optoelectronic/LED; File Size229KB，11 Pages; ManufacturerOsram Opto Semiconductor; Websitehttps://www.osram.com/index-2.jsp

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SFH-309-4 Overview

Ferrite Clamp On Cores BB Freq 43u002644 Mat 270Ohm @250MHz Round

SFH-309-4 Parametric

Parameter Name	Attribute value
Product Category	Phototransistors
Manufacturer	Osram Opto Semiconductor
RoHS	Details
Product	Phototransistors
Package / Case	T-1
Mounting Style	Through Hole
Peak Wavelength	860 nm
Operating Supply Voltage	-
Maximum On-State Collector Current	15 mA
Collector- Emitter Voltage VCEO Max	35 V
Dark Current	15 mA
Rise Time	7 us
Fall Time	7 us
Pd - Power Dissipation	165 mW
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 100 C
Collector-Emitter Breakdown Voltage	35 V
Collector-Emitter Saturation Voltage	200 mV
Half Intensity Angle Degrees	12 deg
Height	5.2 mm
Length	4 mm
Lens Color/Style	Clear
Light Current	2 mA
Output Current	-
Propagation Delay - Max	-
Factory Pack Quantity	2000
Type	Silicon NPN Phototransistor
Wavelength	860 nm
Width	4 mm

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Description	Ferrite Clamp On Cores BB Freq 43u002644 Mat 270Ohm @250MHz Round		Fixed Inductors 15uH 30% 3.4A shdSMD AEC-Q200			ESD Suppressors / TVS Diodes RAILCLAMP 4-LINE 5V 3K LFREE	USB Interface IC USB to Basic Serial UART IC SSOP-16	Photodiodes PHOTODIODE
Product Category	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors
Manufacturer	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor
RoHS	Details	Details	Details	Details	Details	Details	Details	Details
Product	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors
Package / Case	T-1	T-1	T-1	T-1	T-1	T-1	T-1	T-1
Mounting Style	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Peak Wavelength	860 nm	900 nm	860 nm	860 nm	900 nm	900 nm	860 nm	900 nm
Maximum On-State Collector Current	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA
Collector- Emitter Voltage VCEO Max	35 V	35 V	35 V	35 V	35 V	35 V	35 V	35 V
Dark Current	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA
Rise Time	7 us	7 us	-	8 us	9 us	7 us	7 us	-
Fall Time	7 us	7 us	-	8 us	9 us	7 us	7 us	-
Pd - Power Dissipation	165 mW	165 mW	165 mW	165 mW	165 mW	165 mW	165 mW	165 mW
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	+ 100 C	+ 100 C	+ 100 C	+ 100 C	+ 100 C	+ 100 C	+ 100 C	+ 100 C
Collector-Emitter Breakdown Voltage	35 V	35 V	35 V	35 V	35 V	35 V	35 V	35 V
Collector-Emitter Saturation Voltage	200 mV	200 mV	200 mV	200 mV	200 mV	200 mV	200 mV	200 mV
Half Intensity Angle Degrees	12 deg	12 deg	12 deg	12 deg	12 deg	12 deg	12 deg	12 deg
Height	5.2 mm	5.2 mm	5.2 mm	5.2 mm	5.2 mm	5.2 mm	5.2 mm	5.2 mm
Length	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm
Lens Color/Style	Clear	Black	Clear	Clear	Black	Black	Clear	Black
Light Current	2 mA	2 mA	5000 uA	3.2 mA	5 mA	2000 uA	2 mA	5 mA
Factory Pack Quantity	2000	2000	2000	2000	2000	2000	2000	2000
Type	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor
Wavelength	860 nm	900 nm	860 nm	860 nm	900 nm	900 nm	860 nm	900 nm
Width	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm

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