TLP126
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP126
Programmable Controllers
AC / DC-Input Module
Telecommunication
Unit: mm
The TOSHIBA mini flat coupler TLP126 is a small outline coupler, suitable for
surface mount assembly.
TLP126 consists of a photo transistor, optically coupled to two gallium
arsenide infrared emitting diodes connected inverse parallel, and provides
high CTR at low AC input current.
•
•
•
•
•
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 100% (min)
Isolation voltage: 3750 Vrms (min)
UL recognized: UL1577, file No. E67349
c-UL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
TOSHIBA
11-4C1
Weight: 0.09 g (typ.)
Pin Configurations
(top view)
1
6
3
4
1 : Anode, Cathode
3 : Cathode, Anode
4 : Emitter
6 : Collector
Start of commercial production
1988-04
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TLP126
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating
LED
Peak forward current
Diode power dissipation
Diode power dissipation derating
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Detector
Collector current
Peak collector current
Power dissipation
Power dissipation derating
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation derating (Ta
≥
25°C)
Isolation voltage (AC, 60 s, R.H.
≤
60%)
(Note 1)
(10 s)
(Ta
≥
25°C)
(10 ms pulse,100 pps)
(Ta
≥
53°C)
(Ta
≥
53°C)
(100
μs
pulse,100 pps)
Symbol
I
F(RMS)
ΔI
F
/°C
I
FP
P
D
Rating
50
-0.7
1
100
-1.39
125
80
7
50
100
150
-1.5
125
-55 to 125
-55 to 100
260
200
-2.0
3750
Unit
mA
mA/°C
A
mW
mW/°C
°C
V
V
mA
mA
mW
mW/°C
°C
°C
°C
°C
mW
mW/°C
Vrms
Δ
P
D
/°C
T
j
V
CEO
V
ECO
I
C
I
CP
P
C
ΔP
C
/°C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/°C
BV
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Note 1: Device considered a two terminal device: Pins1, and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F(RMS)
I
C
T
opr
Min
―
―
―
-25
Typ.
5
1.6
1
―
Max
48
20
10
75
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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2017-04-27
TLP126
Electrical Characteristics
(Ta = 25°C)
Characteristic
LED
Forward voltage
Capacitance
Collector-emitter breakdown voltage
Detector
Emitter-collector breakdown voltage
Collector dark current
Capacitance collector to emitter
Symbol
V
F
C
T
V
(BR)CEO
V
(BR)ECO
I
CEO
C
CE
Test Condition
I
F
= ±10 mA
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, Ta = 85°C
V = 0 V, f = 1 MHz
Min
1.0
Typ.
1.15
60
Max
1.3
―
Unit
V
pF
V
V
nA
μA
pF
―
80
7
―
―
10
2
12
―
―
100
50
―
―
―
―
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Low input CTR
Collector-emitter saturation voltage
Off-state collector current
CTR symmetry
Symbol
I
C
/I
F
I
C
/I
F(low)
V
CE(sat)
I
C(off)
I
C(ratio)
Test Condition
I
F
= ±1 mA, V
CE
= 0.5 V
IF = ±0.5 mA, V
CE
= 1.5 V
I
C
= 0.5 mA, I
F
= ±1 mA
I
C
= 1 mA, I
F
= ±1 mA
V
F
= ± 0.7 V, V
CE
= 48 V
I
C
(I
F
= -1 mA) / I
C
(I
F
= 1 mA)
(Note 2)
Min
100
50
―
―
―
0.3
Typ.
―
―
―
0.2
1
―
Max
1200
―
0.4
―
10
3
V
μA
—
Unit
%
%
Coupled Electrical Characteristics
(Ta = -25 to 75°C)
Characteristic
Current transfer ratio
Low input CTR
Symbol
I
C
/I
F
I
C
/I
F(low)
Test Condition
I
F
= ±1 mA, V
CE
= 0.5 V
I
F
= ±0.5 mA, V
CE
= 1.5 V
Min
50
―
Typ.
―
50
Max
―
―
Unit
%
%
Note 2:
I
I
(
I
=
I
,
V
=
5
V
)
F
2
CE
=
C
2
F
C
(
ratio
)
I
(
I
=
I
,
V
=
5
V
)
C
1
F
F
1
CE
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TLP126
Isolation characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
AC, 60 s
Isolation voltage
BV
S
AC, 1 s, in oil
DC, 60 s, in oil
Min
―
5×10
10
3750
―
―
Typ.
0.8
10
14
―
10000
10000
Max
―
―
―
―
―
Unit
pF
Ω
Vrms
Vdc
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
V
CC
= 5 V, I
F
= ±1.6 mA
R
L
= 4.7 kΩ
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100Ω
Test Condition
Min
―
―
―
―
―
―
―
Typ.
8
8
10
8
10
50
300
Max
―
―
―
―
―
―
―
μs
μs
Unit
Fig. 1 Switching time test circuit
I
F
V
CC
R
L
V
CE
V
CE
I
F
t
s
V
CC
4.5 V
0.5 V
t
OFF
t
ON
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2017-04-27
TLP126
I
F
– Ta
100
200
P
C
– Ta
Allowable forward current
I
F
(mA)
80
Allowable collector power
dissipation P
C
(mW)
160
60
120
40
80
20
40
0
-20
0
20
40
60
80
100
120
0
-20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
FP
– D
R
I
FP (mA)
3000
I
F
– V
F
100
50
Pulse width
≤
100
μs
Ta = 25°C
Ta = 25°C
500
Pulse forward current
I
F
(mA)
Forward current
10
-3
1000
30
300
10
5
3
100
50
30
1
0.5
0.3
10
10
-2
10
-1
10
0
Duty cycle ratio D
R
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward voltage V
F
(V)
ΔV
F
/ΔTa – I
F
-3.2
I
FP
– V
FP
(mA)
PULSE FORWARD CURRENT I
FP
1000
500
300
Forward voltage temperature
coefficient
ΔV
F
/ΔTa (mV/°C)
-2.8
-2.4
-2.0
-1.6
100
50
30
10
5
3
1
0.6
-1.2
-0.8
-0.4
0.1
Pulse width
≤
10
μs
Repetitive
Frequency = 100 Hz
Ta = 25°C
1.0
1.4
1.8
2.2
2.6
3.0
0.3 0.5
1
3
5
10
30
50
Forward current
I
F
(mA)
Pulse forward voltage V
FP
(V)
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2017-04-27
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