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CAT28C16AN-20T

Description
2K X 8 EEPROM 5V, 200 ns, PQCC32
Categorystorage    storage   
File Size40KB,8 Pages
ManufacturerCatalyst
Websitehttp://www.catalyst-semiconductor.com/
Download Datasheet Parametric View All

CAT28C16AN-20T Overview

2K X 8 EEPROM 5V, 200 ns, PQCC32

CAT28C16AN-20T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeQFJ
package instructionQCCJ, LDCC32,.5X.6
Contacts32
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time200 ns
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-PQCC-J32
JESD-609 codee0
length13.97 mm
memory density16384 bi
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height3.55 mm
Maximum standby current0.0001 A
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
switch bitNO
width11.43 mm
Maximum write cycle time (tWC)10 ms
Base Number Matches1
CAT28C16A
16K-Bit CMOS PARALLEL E
2
PROM
FEATURES
s
Fast Read Access Times: 200 ns
s
Low Power CMOS Dissipation:
s
End of Write Detection:
DATA
Polling
s
Hardware Write Protection
s
CMOS and TTL Compatible I/O
s
10,000 Program/Erase Cycles
s
10 Year Data Retention
s
Commercial, Industrial and Automotive
–Active: 25 mA Max.
–Standby: 100
µ
A Max.
s
Simple Write Operation:
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
s
Fast Write Cycle Time: 10ms Max
Temperature Ranges
DESCRIPTION
The CAT28C16A is a fast, low power, 5V-only CMOS
Parallel E
2
PROM organized as 2K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling signals the start and end of the self-timed
write cycle. Additionally, the CAT28C16A features hard-
ware write protection.
The CAT28C16A is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 10,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 24-pin DIP and SOIC or 32-pin PLCC pack-
ages.
BLOCK DIAGRAM
A4–A10
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
2,048 x 8
E
2
PROM
ARRAY
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
LOGIC
I/O BUFFERS
TIMER
DATA POLLING
I/O0–I/O7
A0–A3
ADDR. BUFFER
& LATCHES
COLUMN
DECODER
5089 FHD F02
© 1998 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 25033-00 2/98

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