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NAND01GW4A2BZB1

Description
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
Categorystorage    storage   
File Size398KB,56 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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NAND01GW4A2BZB1 Overview

32M X 16 FLASH 3V PROM, 35 ns, PDSO48

NAND01GW4A2BZB1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionTFBGA,
Contacts63
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time35 ns
JESD-30 codeR-PBGA-B63
JESD-609 codee0
length11 mm
memory density1073741824 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
typeSLC NAND TYPE
width9 mm

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