Power Transistors
2SC3496, 2SC3496A
Silicon NPN triple diffusion planar type
For power switching
8.5
±0.2
Unit: mm
3.4
±0.3
1.0
±0.1
6.0
±0.2
■
Features
•
High-speed switching
•
High collector-base voltage (Emitter open) V
CBO
•
Satisfactory linearity of forward current transfer ratio h
FE
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
10.0
±0.3
1.5
±0.1
4.4
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
1
2
Collector-base voltage
(Emitter open)
2SC3496
2SC3496A
V
CBO
V
CES
V
CEO
V
EBO
I
B
I
C
I
CP
P
C
900
1 000
900
1 000
800
900
7
0.3
1
2
30
1.3
V
(6.5)
Collector-emitter voltage 2SC3496
(E-B short)
2SC3496A
Collector-emitter voltage 2SC3496
(Base open)
2SC3496A
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
a
=
25°C
V
V
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
V
A
A
A
W
°C
°C
T
j
T
stg
150
−55
to
+150
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Collector-base cutoff current
(Emitter open)
2SC3496
2SC3496A
2SC3496
2SC3496A
I
EBO
h
FE1
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
I
CBO
V
CB
=
900 V, I
E
=
0
V
CB
=
1 000 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
0.05 A
V
CE
=
5 V, I
C
=
0.5 A
I
C
=
0.2 A, I
B
=
0.04 A
I
C
=
0.2 A, I
B
=
0.04 A
V
CE
=
10 V, I
C
=
0.05 A, f
=
1 MHz
I
C
=
0.2 A
I
B1
=
0.04 A, I
B2
= −
0.08 A
V
CC
=
250 V
4
1.0
3.0
1.0
6
3
1.5
1.0
V
V
MHz
µs
µs
µs
Symbol
V
CEO
Conditions
I
C
=
1 mA, I
B
=
0
Min
800
900
50
50
50
µA
µA
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00104AED
(7.6)
Parameter
Symbol
Rating
Unit
(1.5)
0.8
±0.1
R = 0.5
R = 0.5
2.54
±0.3
1.0
±0.1
1.4
±0.1
0.4
±0.1
5.08
±0.5
(8.5)
(6.0)
1.3
3
2.0
±0.5
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1.5
+0
–0.4
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
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2002 JUL
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