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NAND128R4A2AZA1T

Description
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
Categorystorage    storage   
File Size398KB,56 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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NAND128R4A2AZA1T Overview

32M X 16 FLASH 3V PROM, 35 ns, PDSO48

NAND128R4A2AZA1T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionTFBGA, BGA55,8X12,32
Contacts55
Reach Compliance Code_compli
ECCN code3A991.B.1.A
Maximum access time35 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B55
JESD-609 codee0
length10 mm
memory density134217728 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1K
Number of terminals55
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA55,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
page size256 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.05 mm
Department size8K
Maximum standby current0.00005 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeSLC NAND TYPE
width8 mm

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