NAND512R4A0BN1F datasheet, PDF

NAND512R4A0BN1F: Description32M X 16 FLASH 3V PROM, 35 ns, PDSO48; Categorystorage storage; File Size398KB，56 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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NAND512R4A0BN1F Overview

32M X 16 FLASH 3V PROM, 35 ns, PDSO48

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TSOP
package instruction	12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
Contacts	48
Reach Compliance Code	compli
ECCN code	3A991.B.1.A
Maximum access time	35 ns
JESD-30 code	R-PDSO-G48
JESD-609 code	e3/e6
length	18.4 mm
memory density	536870912 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	33554432 words
character code	32000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN/TIN BISMUTH
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
type	NAND TYPE
width	12 mm
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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