NAND512W3A0CZA6E datasheet, PDF

NAND512W3A0CZA6E: Description32M X 16 FLASH 3V PROM, 35 ns, PDSO48; Categorystorage storage; File Size398KB，56 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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NAND512W3A0CZA6E Overview

32M X 16 FLASH 3V PROM, 35 ns, PDSO48

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	63
Reach Compliance Code	compli
ECCN code	3A991.B.1.A
Maximum access time	35 ns
JESD-30 code	R-PBGA-B63
length	11 mm
memory density	536870912 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	63
word count	67108864 words
character code	64000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.05 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
type	SLC NAND TYPE
width	9 mm

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