Infrared Emitting Diodes(GaAs)
KODENSHI
EL-316
DIMENSIONS
The EL-316 is a high-power GaAs IRED mounted in a
clear epoxy package.
(Unit : mm)
FEATURES
•ø3 casting mold type
•High output power
APPLICATIONS
•VTR
•Optical remote controllers
•Transmission sensors
MAXIMUM RATINGS
Item
Reverse voltage
Forward current
Power dissipation
Pulse forward current
*1
Operating temp.
Storage temp.
Soldering temp.
*2
(Ta=25℃)
Symbol
V
R
I
F
P
D
I
FP
Topr.
Tstg.
Tsol.
Rating
4
60
80
0.5
－25½＋80
－40½＋85
240
Unit
V
mA
mW
A
℃
℃
℃
*1. pulse width ：tw ≦100 μ
sec.period ：T=10msec.
*2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage
Reverse current
Peak emission wavelength
Spectral bandwidth
Radiant intensity
Half angle
(Ta=25℃)
Symbol
V
I
R
λp
Δλ
PO
Δθ
F
Conditions
I
F
=40mA
V
R
=4V
I
F
=40mA
I
F
=40mA
I
F
=40mA
Min.
Typ.
1.2
940
50
20
±17
Max.
1.5
10
Unit.
V
μ
A
nm
nm
mW/sr
deg.
10
- 1-
Infrared Emitting Diodes(GaAs)
EL-316
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
- 2-
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