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EDF1BS

Description
1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size73KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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EDF1BS Overview

1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

EDF1AS THRU EDF1DS
MINIATURE GLASS PASSIVATED FAST EFFICIENT
SURFACE MOUNT BRIDGE RECTIFIER
Reverse Voltage -
50 to 200 Volts
Case Style DFS
0.205 (5.2)
0.195 (5.0)
Forward Current -
1.0 Ampere
FEATURES
0.047 (1.20)
0.040 (1.02)
0.404 (10.3)
0.386 (9.80)
0.335 (8.51)
0.320 (8.13)
45
o
0.255 (6.5)
0.245 (6.2)
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
This series is UL listed under Recognized Component Index,
file number E54214
Glass passivated chip junctions
High surge overload rating-
50 amperes peak
Ideal for printed circuit boards
Superfast recovery times for high efficiency
High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs (2.3kg) tension
0.013 (0.330)
0.130 (3.3)
0.009 (0.241)
0.120 (3.05)
MECHANICAL DATA
0.060 (1.524)
0.040 (1.016)
0.013 (0.330)
0.003 (0.076)
Dimensions in inches and (millimeters)
Case:
Molded plastic body over passivated junctions
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on body
Mounting Position:
Any
Weight:
0.04 ounce, 1.0 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
EDF1AS
EDF1BS
EDF1CS
EDF1DS
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output
rectified current at T
A
=40°C
(NOTE 2)
Peak forward surge current single half sine-wave
superimposed on rated load (JEDEC Method) T
J
=150°C
Rating for fusing (t < 8.3ms)
Maximum instantaneous forward voltage drop
per leg at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Typical thermal resistance per leg
(NOTE 2)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(2) Units mounted on P.C.B. with 0.51 x 0.51” (13 x 13mm) copper pads
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
2
t
V
F
T
A
=25°C
T
A
=125°C
I
R
t
rr
R
ΘJA
R
ΘJL
T
J
, T
STG
50
35
50
100
70
100
1.0
50.0
10.0
1.05
5.0
1.0
50.0
38.0
12.0
150
106
150
200
140
200
Volts
Volts
Volts
Amp
Amps
A
2
sec
Volts
µA
mA
ns
°C/W
°C
-55 to +150
4/98

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EDF1BS EDF1AS EDF1CS EDF1DS
Description 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 150 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
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