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CAT24C44VE-TE13

Description
16X16 NON-VOLATILE SRAM, 375ns, PDSO8, GREEN, SOIC-8
Categorystorage    storage   
File Size57KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

CAT24C44VE-TE13 Overview

16X16 NON-VOLATILE SRAM, 375ns, PDSO8, GREEN, SOIC-8

CAT24C44VE-TE13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeSOIC
package instructionSOP,
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time375 ns
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length4.9 mm
memory density256 bit
Memory IC TypeNON-VOLATILE SRAM
memory width16
Number of functions1
Number of terminals8
word count16 words
character code16
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize16X16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.75 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width3.9 mm
Base Number Matches1
CAT24C44
256-Bit Serial Nonvolatile CMOS Static RAM
FEATURES
s
Single 5V Supply
s
Infinite EEPROM to RAM Recall
s
CMOS and TTL Compatible I/O
s
Low CMOS Power Consumption:
s
JEDEC Standard Pinouts:
–8-lead DIP
–8-lead SOIC
s
100,000 Program/Erase Cycles (EEPROM)
s
Auto Recall on Power-up
s
Commercial, Industrial and Automotive
–Active: 3mA Max.
–Standby: 30
µ
A Max.
s
Power Up/Down Protection
s
10 Year Data Retention
Temperature Ranges
DESCRIPTION
The CAT24C44 Serial NVRAM is a 256-bit nonvolatile
memory organized as 16 words x 16 bits. The high
speed Static RAM array is bit for bit backed up by a
nonvolatile EEPROM array which allows for easy trans-
fer of data from RAM array to EEPROM (STORE) and
from EEPROM to RAM (RECALL). STORE operations
are completed in 10ms max. and RECALL operations
typically within 1.5µs. The CAT24C44 features unlim-
ited RAM write operations either through external RAM
writes or internal recalls from EEPROM. Internal false
store protection circuitry prohibits STORE operations
when V
CC
is less than 3.5V (typical) ensuring EEPROM
data integrity.
The CAT24C44 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 100,000 program/erase cycles (EEPROM) and
has a data retention of 10 years. The device is available
in JEDEC approved 8-lead plastic DIP and SOIC
packages.
PIN CONFIGURATION
DIP Package (L)
CE
SK
DI
DO
1
2
3
4
8
7
6
5
PIN FUNCTIONS
Pin Name
SOIC Package ( V)
1
2
3
4
8
7
6
5
VCC
STORE
RECALL
VSS
Function
Serial Clock
Serial Input
Serial Data Output
Chip Enable
Recall
Store
+5V
Ground
SK
DI
DO
CE
RECALL
STORE
V
CC
V
SS
VCC
CE
STORE SK
RECALL DI
VSS
DO
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
Doc. No. MD-1083, Rev. T
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