TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
DEVICES
LEVELS
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
j
, T
stg
R
θJC
R
θJA
2N4150
2N4150S
70
100
2N5237
2N5237S
120
150
10
10
1.0
15
-65 to +200
10
175
2N5238
2N5238S
170
200
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
TO-5
2N4150, 2N5237, 2N5238
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
Junction- to Ambient
1)
2)
Derate linearly @ 5.7mW/°C for T
A
> +25°C
Derate linearly @ 100mW/°C for T
C
> +25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 0.1mAdc
Symbol
Min.
Max.
Unit
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V
(BR)CEO
70
120
170
Vdc
Collector-Emitter Cutoff Current
V
BE
= 0.5Vdc, V
CE
= 60Vdc
V
BE
= 0.5Vdc, V
CE
= 110Vdc
V
BE
= 0.5Vdc, V
CE
= 160Vdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc
V
CE
= 110Vdc
V
CE
= 160Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0Vdc
V
EB
= 5.0Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
I
CEX
10
10
10
µAdc
TO-39
(TO-205AD)
2N4150S, 2N5237S, 2N5238S
µAdc
I
CEO
10
10
10
10
0.1
I
EBO
µAdc
T4-LDS-0014 Rev. 4 (082192)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
(CONT.)
Parameters / Test Conditions
Collector-Base Cutoff Current
V
CB
= 100Vdc
V
CB
= 150Vdc
V
CB
= 200Vdc
V
CB
= 80Vdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 1.0Adc, V
CE
= 5.0Vdc
I
C
= 5.0Adc, V
CE
= 5.0Vdc
I
C
= 10Adc, V
CE
= 5.0Vdc
Collector-Emitter Saturation Voltage
I
C
= 5.0Adc, I
B
= 0.5Adc
I
C
= 10Adc, I
B
= 1.0Adc
Base-Emitter Saturation Voltage
I
C
= 5.0Adc, I
B
= 0.5Adc
I
C
= 10Adc, I
B
= 1.0Adc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 0.2Adc, V
CE
= 10Vdc, f = 10MHz
Forward Current Transfer Ratio
I
C
= 50mAdc, V
CE
= 5.0V, f = 1.0kHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Delay Time
Rise Time
Storage Time
Fall Time
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t = 1.0s
Test 1
V
CE
= 40Vdc, I
C
= 0.22Adc
Test 2
V
CE
= 70Vdc, I
C
= 90mAdc
Test 3
V
CE
= 120Vdc, I
C
= 15mAdc
2N5237, 2N5237S
V
CE
= 170Vdc, I
C
= 3.5mAdc
2N5238, 2N5238S
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%
T4-LDS-0014 Rev. 4 (082192)
Page 2 of 2
V
CC
= 20Vdc, V
BB
= 5.0Vdc
I
C
= 5.0Adc, I
B1
= 0.5Adc
V
CC
= 20Vdc, V
BB
= 5.0Vdc
I
C
= 5.0Adc, I
B1
= -I
B2
= -0.5Adc
Symbol
t
d
t
r
t
s
t
f
Min.
Max.
50
500
1.5
500
Unit
ns
ns
µs
ns
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
Symbol
|h
fe
|
Min.
1.5
Max.
7.5
Unit
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
Symbol
Min.
Max.
10
10
10
0.1
Unit
I
CBO
µAdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
All Types
All Types
h
FE
50
50
50
40
10
200
225
225
120
-
0.6
2.5
1.5
25
Vdc
Vdc
V
CE(sat)
V
BE(sat)
h
fe
40
40
40
160
160
250
350
pF
C
obo
Mobile and portable
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