Data Sheet
FEATURES
Low noise figure: 1.8 dB
P1dB output power: 14.5 dBm
P
SAT
output power: 17.5 dBm
High gain: 15 dB
Output IP3: 29 dBm
Supply voltage: V
DD
= 7 V at 70 mA
50 Ω matched input/output (I/O)
32-lead 5 mm ×5 mm SMT package: 25mm
2
GaAs pHEMT MMIC Low Noise
Amplifier, 0.3 GHz to 20 GHz
HMC1049
FUNCTIONAL BLOCK DIAGRAM
32
31
30
29
28
27
26
25
NC
V
DD
NC
GND
RFIN
NC
NC
NC
1
2
3
4
5
6
7
8
NC
NC
ACG1
NC
NC
NC
NC
NC
HMC1049
24
23
22
21
20
19
18
17
NC
NC
GND
RFOUT/V
DD
NC
NC
NC
NC
Test instrumentation
High linearity microwave radios
VSAT and SATCOM
Military and space
Figure 1.
GENERAL DESCRIPTION
The
HMC1049
is a GaAs MMIC low noise amplifier that
operates between 0.3 GHz and 20 GHz. This LNA provides
15 dB of small signal gain, 1.8 dB noise figure, and an IP3
output of 29 dBm, yet requires only 70 mA from a 7 V supply.
The P1dB output power of 14.5 dBm enables the LNA to
function as a local oscillator (LO) driver for balanced, I/Q, or
image rejection mixers. V
DD
can also be applied to Pin 21;
however, Pin 21 requires a bias tee with V
DD
= 4 V. The
HMC1049
amplifier I/Os are internally matched to 50 Ω and
the device is supplied in a compact, leadless, QFN 5 mm ×5 mm
surface-mount package.
Rev. A
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Trademarks and registered trademarks are the property of their respective owners.
12828-002
APPLICATIONS
NC
NC
NC
NC
V
GG
NC
ACG3
ACG2
9
10
11
12
13
14
15
16
HMC1049
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings ....................................................... 4
ESD Caution .................................................................................. 4
Data Sheet
Pin Configuration and Function Descriptions..............................5
Interface Schematics .....................................................................6
Typical Performance Characteristics ..............................................7
Evaluation Printed Circuit Board ................................................. 12
Packaging and Ordering Information ......................................... 14
Outline Dimensions ................................................................... 14
Ordering Guide .......................................................................... 14
REVISION HISTORY
11/14—Rev. 01.1213 to Rev. A
This Hittite Microwave Products data sheet has been reformatted
to meet the styles and standards of Analog Devices, Inc.
Updated Format .................................................................. Universal
Changes to General Description .................................................... 1
Change to Table 2, Thermal Resistance Parameter Column ...... 4
Added Figure 2.................................................................................. 5
Changes to Table 4 ............................................................................ 5
Moved Figure 3 to Figure 9 to Interface Schematics Section...... 6
Change to Figure 8 and Figure 9..................................................... 6
Changes to Figure 36 ...................................................................... 13
Added Ordering Guide Section .................................................... 15
Rev. A | Page 2 of 14
Data Sheet
SPECIFICATIONS
T
A
= 25°C, V
DD
= 7 V, I
DD
= 70 mA
1
.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression (P1dB)
Saturated (P
SAT
)
Output Third-Order Intercept (IP3)
2
TOTAL SUPPLY CURRENT
1
2
HMC1049
Min
0.3
13.5
Typ
16.5
0.006
2.5
15
8
15
18
31
70
Max
1
Min
1
12
Typ
15
0.019
1.8
13
15
14.5
17.5
29
70
Max
14
Min
14
10
Typ
13
0.017
2.7
14
13
13
16
26
70
Max
20
3.5
2.5
4.0
Unit
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
Adjust V
GG
between −2 V to 0 V to achieve I
DD
= 70 mA typical.
Measurement taken at P
OUT
/tone = 8 dBm.
Rev. A | Page 3 of 14
HMC1049
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Drain Bias Voltage (V
DD
)
Drain Bias Voltage (RF Out/V
DD
)
RF Input Power
Gate Bias Voltage, V
GG
Channel Temperature
Continuous P
DISS
(T = 85°C)
(Derate 37.1 mW/°C Above 85°C)
Thermal Resistance (Channel to Ground
Paddle)
Temperature
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
Rating
10 V
7V
18 dBm
−2 V to +0.2 V
175°C
3.34 W
26.9°C/W
Data Sheet
Table 3. Typical Supply Current vs. V
DD
V
DD
(V)
5
6
7
1
I
DD1
(mA)
70
70
70
Adjust V
GG
to achieve I
DD
= 70 mA.
ESD CAUTION
−65°C to +150°C
−40°C to +85°C
Class 1A
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. A | Page 4 of 14
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
32
31
30
29
28
27
26
25
HMC1049
NC
NC
ACG1
NC
NC
NC
NC
NC
NC
V
DD
NC
GND
RFIN
NC
NC
NC
1
2
3
4
5
6
7
8
HMC1049
TOP VIEW
(Not to Scale)
24
23
22
21
20
19
18
17
NC
NC
GND
RFOUT/V
DD
NC
NC
NC
NC
NOTES
1. NC = NO CONNECT. THESE PINS ARE NOT CONNECTED
INTERNALLY; HOWEVER, ALL DATA WAS MEASURED WITH
THESE PINS CONNECTED TO RF/DC GROUND EXTERNALLY.
2. EXPOSED PAD. THE EXPOSED GROUND PADDLE MUST BE
CONNECTED TO RF/DC GROUND.
NC
NC
NC
NC
V
GG
NC
ACG3
ACG2
9
10
11
12
13
14
15
16
Figure 2. Pin Configuration Diagram
Table 4. Pin Function Descriptions
Pin No.
1, 3, 6 to 12, 14, 17 to
20, 23 to 29, 31, 32
5
2
30
21
15, 16
13
4, 22
0
1
Mnemonic
NC
RFIN
V
DD
ACG1
RFOUT/V
DD
ACG2,
ACG3
V
GG
GND
EP
Description
1
No Connect. These pins are not connected internally; however, all data was measured with these pins
connected to RF/dc ground externally (see the Typical Performance Characteristics section for data
plots).
RF Input. This pin is dc-coupled and matched to 50 Ω.
Power Supply Voltage for the Amplifier. External bypass capacitors (100 pF and 0.01 μF) are required.
Low Frequency Termination. An external bypass capacitor of 100 pF is required.
RF Output/Alternate Power Supply Voltage for the Amplifier. An external bias tee is required when
used as alternative V
DD
. This pin is dc-coupled and matched to 50 Ω.
Low Frequency Termination. External bypass capacitors of 100 pF are required.
Gate Control for Amplifier. Adjust the voltage to achieve I
DD
= 70 mA. External bypass capacitors of
100 pF, 0.01 μF, and 4.7μF are required.
Ground. Connect Pin 4 and Pin 22 to RF/dc ground.
Exposed Pad. The exposed ground paddle must be connected to RF/dc ground.
See the Interface Schematics section for pin interfaces.
Rev. A | Page 5 of 14
12828-004
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