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NTE363

Description
Silicon NPN Transistor RF Power Amp, PO = 4W
CategoryDiscrete semiconductor    The transistor   
File Size22KB,2 Pages
ManufacturerNTE
Websitehttp://www.nteinc.com
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NTE363 Overview

Silicon NPN Transistor RF Power Amp, PO = 4W

NTE363 Parametric

Parameter NameAttribute value
MakerNTE
package instructionPOST/STUD MOUNT, O-MRPM-F4
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.8 A
Collector-based maximum capacity25 pF
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-MRPM-F4
Number of components1
Number of terminals4
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power consumption environment15 W
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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