IXKH70N60C5 datasheet, PDF - EEWORLD Datasheet

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IXKH70N60C5: Categorysemiconductor Discrete semiconductor; File Size103KB，4 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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IXKH70N60C5 Parametric

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	IXYS ( Littelfuse )
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-247-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	70 A
Rds On - Drain-Source Resistance	45 mOhms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	3.5 V
Qg - Gate Charge	17 uC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Channel Mode	Enhancement
Configuration	Single
Fall Time	10 ns
Pd - Power Dissipation	625 W
Rise Time	20 ns
Factory Pack Quantity	30
Transistor Type	1 N-Channel
Type	CoolMOS Power MOSFET
Typical Turn-Off Delay Time	100 ns
Typical Turn-On Delay Time	30 ns
Unit Weight	0.229281 oz

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IXKH 70N60C5

CoolMOS

™ 1)

Power MOSFET

N-Channel Enhancement Mode

Low R

DSon

, High V

DSS

MOSFET

Ultra low gate charge

D25

70 A

DSS

= 600 V

DS(on) max

= 0.045

TO-247 AD (IXKH)

D(TAB)

MOSFET

Symbol

DSS

D25

D90

dV/dt

Symbol

= 25°C

= 90°C

single pulse

repetitive

= 11 A; T

= 25°C

Conditions

= 25°C

Maximum Ratings

600

1950

V/ns

Features

• fast CoolMOS

™ 1)

power MOSFET

generation

- High blocking capability

- Lowest resistance

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

due to reduced chip thickness

• Enhanced total power density

Applications

• Switched mode power supplies

(SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

• Inductive heating

• PDP and LCD adapter

MOSFET dV/dt ruggedness V

= 0...480 V

Conditions

Characteristic Values

= 25°C, unless otherwise speciﬁed)

min.

typ.

2.5

= 25°C

= 125°C

100

6800

320

150

100

0.2

190

max.

3.5

mΩ

µA

K/W

DSon

GS(th)

DSS

GSS

iss

oss

d(on)

d(off)

thJC

= 10 V; I

= 44 A

= V

; I

= 3 mA

= 600 V; V

= 0 V

20 V; V

= 0 V

= 0 V; V

= 100 V

f = 1 MHz

= 0 to 10 V; V

= 400 V; I

= 44 A

CoolMOS

™

is a trademark of

Inﬁneon Technologies AG.

= 10 V; V

= 400 V

= 44 A; R

= 3.3

IXYS reserves the right to change limits, test conditions and dimensions.

20090209d

1-4

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