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FDB3682 / FDP3682 N-Channel PowerTrench
®
MOSFET
March 2013
FDB3682 / FDP3682
N-Channel PowerTrench
®
MOSFET
100 V, 32 A, 36 m
Ω
Features
• R
DS(on)
= 32 m
Ω
( Typ.) @ V
GS
= 10 V, I
D
= 32 A
•
Q
G(tot)
= 18.5 nC( Typ.)
@ V
GS
= 10 V
• Low Miller Charge
• Low Q
rr
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Applications
• Consumer Appliances
• Synchronous Rectification
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
Formerly developmental type 82755
D
D
G
G
S
D2-PAK
(TO-263)
G
D
S
TO-220
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 100 C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θJA
= 43
o
C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
o
Parameter
FDB3682 / FDP3682
100
±20
32
23
6
Figure 4
55
95
0.63
-55 to 175
Unit
V
V
A
A
A
A
mJ
W
W/
o
C
o
C
Operating and Storage Temperature
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-220, TO-263, Max.
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2), Max.
Thermal Resistance Junction to Ambient TO-263, 1in
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