NVRAM 4096K NV SRAM
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Maxim |
| Parts packaging code | MODULE |
| package instruction | 0.740 INCH, DIP-32 |
| Contacts | 32 |
| Reach Compliance Code | not_compliant |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 70 ns |
| Other features | 10 YEAR DATA RETENTION |
| JESD-30 code | R-XDMA-P32 |
| JESD-609 code | e0 |
| memory density | 4194304 bit |
| Memory IC Type | NON-VOLATILE SRAM MODULE |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 524288 words |
| character code | 512000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 512KX8 |
| Package body material | UNSPECIFIED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP32,.6 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.005 A |
| Maximum slew rate | 0.085 mA |
| Maximum supply voltage (Vsup) | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | PIN/PEG |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| DS1250AB-70IND | DS1250YP-100 | |
|---|---|---|
| Description | NVRAM 4096K NV SRAM | NVRAM 4096K NV SRAM |
| Is it lead-free? | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | Maxim | Maxim |
| Parts packaging code | MODULE | DMA |
| package instruction | 0.740 INCH, DIP-32 | POWERCAP MODULE-34 |
| Contacts | 32 | 34 |
| Reach Compliance Code | not_compliant | not_compliant |
| ECCN code | 3A991.B.2.A | 3A991.B.2.A |
| Maximum access time | 70 ns | 100 ns |
| Other features | 10 YEAR DATA RETENTION | 10 YEAR DATA RETENTION |
| JESD-30 code | R-XDMA-P32 | R-XDMA-U34 |
| JESD-609 code | e0 | e0 |
| memory density | 4194304 bit | 4194304 bit |
| Memory IC Type | NON-VOLATILE SRAM MODULE | NON-VOLATILE SRAM MODULE |
| memory width | 8 | 8 |
| Number of functions | 1 | 1 |
| Number of terminals | 32 | 34 |
| word count | 524288 words | 524288 words |
| character code | 512000 | 512000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C | 70 °C |
| organize | 512KX8 | 512KX8 |
| Package body material | UNSPECIFIED | UNSPECIFIED |
| Encapsulate equivalent code | DIP32,.6 | MODULE,34LEAD,1.0 |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 240 |
| power supply | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified |
| Maximum standby current | 0.005 A | 0.005 A |
| Maximum slew rate | 0.085 mA | 0.085 mA |
| Maximum supply voltage (Vsup) | 5.25 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.75 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V |
| surface mount | NO | YES |
| technology | CMOS | CMOS |
| Temperature level | INDUSTRIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | TIN LEAD |
| Terminal form | PIN/PEG | J INVERTED |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
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