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PDTA123ES126

Description
Bipolar Transistors - Pre-Biased TRANS BISS AMMO LARGE
Categorysemiconductor    Discrete semiconductor   
File Size183KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PDTA123ES126 Overview

Bipolar Transistors - Pre-Biased TRANS BISS AMMO LARGE

PDTA123ES126 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - Pre-Biased
ManufacturerNXP
ConfigurationSingle
Transistor PolarityPNP
Typical Input Resistor2.2 kOhms
Typical Resistor Ratio1
Mounting StyleSMD/SMT
Package / CaseSPT-3
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Maximum Operating Temperature+ 150 C
PackagingAmmo Pack
Height5.2 mm
Length4.8 mm
Minimum Operating Temperature- 65 C
Factory Pack Quantity2000
Width4.2 mm
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA123E series
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product data sheet
Supersedes data of 2004 Apr 07
2004 Aug 02

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