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PZT2222AT1

Description
SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT
CategoryDiscrete semiconductor    The transistor   
File Size80KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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PZT2222AT1 Overview

SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

PZT2222AT1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)285 ns
Maximum opening time (tons)35 ns
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZT2222AT1/D
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear and switching
applications. The device is housed in the SOT-223 package which is designed for
medium power surface mount applications.
PNP Complement is PZT2907AT1
The SOT-223 package can be soldered using wave or reflow.
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die.
Available in 12 mm tape and reel
Use PZT2222AT1 to order the 7 inch/1000 unit reel.
Use PZT2222AT3 to order the 13 inch/4000 unit reel.
BASE
1
3
EMITTER
COLLECTOR
2, 4
PZT2222AT1
Motorola Preferred Device
SOT-223 PACKAGE
NPN SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (Open Collector)
Collector Current
Total Power Dissipation up to TA = 25°C(1)
Storage Temperature Range°
Junction Temperature°
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
40
75
6.0
600
1.5
– 65 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance from Junction to Ambient
Lead Temperature for Soldering, 0.0625″ from case
Time in Solder Bath
R
θJA
TL
83.3
260
10
°C/W
°C
Sec
DEVICE MARKING
P1F
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 10
µAdc,
IE = 0)
Emitter-Base Breakdown Voltage (IE = 10
µAdc,
IC = 0)
Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc)
Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc)
Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEX
ICEX
IEBO
40
°75°
6.0
°—°
20
10
100
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
REV 2
©
Motorola, Inc. 1996
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