EM658160TS-4 datasheet, PDF - EEWORLD Datasheet

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EM658160TS-4: Description4M x 16 ddr synchronous dram (Sdram); Categorystorage storage; File Size155KB，26 Pages; ManufacturerEtron; Websitehttp://www.etron.com/

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EM658160TS-4 Overview

4M x 16 ddr synchronous dram (Sdram)

EM658160TS-4 Parametric

Parameter Name	Attribute value
Maker	Etron
Reach Compliance Code	compliant
Maximum access time	0.6 ns
Maximum clock frequency (fCLK)	250 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
memory density	67108864 bit
Memory IC Type	DDR DRAM
memory width	16
Number of terminals	66
word count	4194304 words
character code	4000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply	2.5,3.3 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	2,4,8
Maximum standby current	0.08 A
Maximum slew rate	0.27 mA
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	DUAL

EM658160TS-4 Related Products

	EM658160TS-4	EM658160	EM658160TS-33	EM658160TS-6	EM658160TS-35	EM658160TS-5	EM658160TS-8	EM658160TS-7
Description	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)
Maker	Etron	-	-	Etron	-	Etron	Etron	Etron
Reach Compliance Code	compliant	-	-	compliant	-	compliant	compliant	compliant
Maximum access time	0.6 ns	-	-	0.7 ns	-	0.7 ns	0.8 ns	0.75 ns
Maximum clock frequency (fCLK)	250 MHz	-	-	166 MHz	-	200 MHz	125 MHz	143 MHz
I/O type	COMMON	-	-	COMMON	-	COMMON	COMMON	COMMON
interleaved burst length	2,4,8	-	-	2,4,8	-	2,4,8	2,4,8	2,4,8
JESD-30 code	R-PDSO-G66	-	-	R-PDSO-G66	-	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66
memory density	67108864 bit	-	-	67108864 bit	-	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	DDR DRAM	-	-	DDR DRAM	-	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	-	-	16	-	16	16	16
Number of terminals	66	-	-	66	-	66	66	66
word count	4194304 words	-	-	4194304 words	-	4194304 words	4194304 words	4194304 words
character code	4000000	-	-	4000000	-	4000000	4000000	4000000
Maximum operating temperature	70 °C	-	-	70 °C	-	70 °C	70 °C	70 °C
organize	4MX16	-	-	4MX16	-	4MX16	4MX16	4MX16
Output characteristics	3-STATE	-	-	3-STATE	-	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	-	-	TSSOP	-	TSSOP	TSSOP	TSSOP
Encapsulate equivalent code	TSSOP66,.46	-	-	TSSOP66,.46	-	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46
Package shape	RECTANGULAR	-	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	-	-	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	-	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply	2.5,3.3 V	-	-	2.5,3.3 V	-	2.5,3.3 V	2.5,3.3 V	2.5,3.3 V
Certification status	Not Qualified	-	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	-	-	4096	-	4096	4096	4096
Continuous burst length	2,4,8	-	-	2,4,8	-	2,4,8	2,4,8	2,4,8
Maximum standby current	0.08 A	-	-	0.065 A	-	0.065 A	0.055 A	0.06 A
Maximum slew rate	0.27 mA	-	-	0.22 mA	-	0.25 mA	0.18 mA	0.2 mA
surface mount	YES	-	-	YES	-	YES	YES	YES
technology	CMOS	-	-	CMOS	-	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	-	-	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	-	-	GULL WING	-	GULL WING	GULL WING	GULL WING
Terminal pitch	0.635 mm	-	-	0.635 mm	-	0.635 mm	0.635 mm	0.635 mm
Terminal location	DUAL	-	-	DUAL	-	DUAL	DUAL	DUAL

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