LS830 LS831 LS832 LS833
Linear Integrated Systems
FEATURES
ULTRA LOW DRIFT
ULTRA LOW LEAKAGE
LOW NOISE
LOW CAPACITANCE
|∆V
GS1-2
/∆T|= 5µV/°C max.
I
G
= 80fA TYP.
e
n
= 70nV/√Hz TYP.
C
ISS
= 3pf MAX.
ULTRA LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
D1
S1
G2
G1
3
5
S2
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
40V
-V
GSS
-V
DSO
-I
G(f)
-I
G
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
10mA
10µA
D1
2
D2
6
D2
1
S1
7
G2
G1
S2
BOTTOM VIEW
22 X 20 MILS
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
40mW @ +125°C
LS833
75
25
0.5
0.5
1.0
1.0
UNITS
µV/°C
mV
pA
nA
pA
nA
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS830 LS831 LS832
5
10
20
|∆V
GS1-2
/∆T| max. Drift vs. Temperature
|V
GS1-2
| max.
-I
G
max
-I
G
max
-I
GSS
-I
GSS
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
25
0.1
0.1
0.2
0.5
25
0.1
0.1
0.2
0.5
25
0.1
0.1
0.2
0.5
CONDITIONS
V
DG
= 10V
V
DG
= 10V
T
A
= +125°C
V
GS
= 0
T
A
= +125°C
I
D
= 30µA
I
D
= 30µA
T
A
= -55°C to +125°C
V
GS
= -20V
SYMBOL
BV
GSS
BV
GGO
Y
fss
Y
fs
|Y
fs1-2
/Y
fs
|
I
DSS
|I
DSS1-2
/I
DSS
|
V
GS
(off) or V
P
V
GS
I
GGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Gate-to-Gate Leakage
MIN.
40
40
70
50
--
60
--
0.6
--
--
TYP.
60
--
300
100
1
400
2
2
--
1
MAX.
--
--
500
200
5
1000
5
4.5
4
--
UNITS
V
V
µmho
µmho
%
µA
%
V
V
pA
CONDITIONS
V
DS
= 0
I
D
= 1nA
I
G
= 1nA
V
DG
= 10V
V
DG
= 10V
I
D
= 0
V
GS
= 0
I
D
= 30µA
I
S
= 0
f= 1kHz
f= 1kHz
V
DG
= 10V
V
GS
= 0
V
DS
= 10V
V
DG
= 10V
V
GG
= 20V
I
D
= 1nA
I
D
= 30µA
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
SYMBOL
Y
OSS
Y
OS
|Y
OS1-2
|
CMR
CMR
NF
e
n
CHARACTERISTICS
OUTPUT CONDUCTANCE
Full Conduction
Operating
Differential
COMMON MODE REJECTION
-20 log |∆V
GS1-2
/∆V
DS
|
-20 log |∆V
GS1-2
/∆V
DS
|
NOISE
Figure
Voltage
CAPACITANCE
Input
Reverse Transfer
Drain-to-Drain
MIN.
--
--
--
--
--
--
--
TYP.
--
--
--
90
90
--
20
MAX. UNITS
5
0.5
0.1
--
--
1
70
µmho
µmho
µmho
dB
dB
dB
nV/√Hz
CONDITIONS
V
DG
= 10V
V
DG
= 10V
V
GS
= 0
I
D
= 30µA
∆V
DS
= 10 to 20V
∆V
DS
= 5 to 10V
V
DS
= 10V
f= 100Hz
V
DG
= 10V
NBW= 1Hz
V
DS
= 10V
V
DS
= 10V
V
DG
= 10V
I
D
= 30µA
I
D
= 30µA
V
GS
= 0
R
G
= 10MΩ
NBW= 6Hz
I
D
= 30µA f= 10Hz
C
ISS
C
RSS
C
DD
--
--
--
--
--
--
3
1.5
0.1
pF
pF
pF
V
GS
= 0
V
GS
= 0
I
D
= 30µA
f= 1MHz
f= 1MHz
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.100
P-DIP
0.320
(8.13)
0.290
(7.37)
0.405
(10.29)
MAX.
S1 1
D1 2
SS 3
G1 4
8
7
6
5
G2
SS
D2
S2
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
2 3 4
1
5
8 7 6
6 LEADS
0.019 DIA.
0.016
0.100
0.500 MIN.
0.050
2 3 4
1
8
5
6
7
SOIC
0.150
(3.81)
0.158
(4.01)
0.100
45°
0.046
0.036
45°
0.048
0.028
0.028
0.034
0.188
(4.78)
0.197
(5.00)
S1
D1
SS
G1
1
2
3
4
8
7
6
5
G2
SS
D2
S2
0.228
(5.79)
0.244
(6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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