LS350 LS351 LS352
Linear Integrated Systems
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
HIGH GAIN
TIGHT V
BE
MATCHING
HIGH f
T
h
FE
≥
200 @ 10µA - 1mA
|V
BE1
-V
BE2
| = 0.2mV TYP.
275MHz TYP. @ 1mA
C1
C2
E1
3
5
E2
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
I
C
Collector Current
10mA
B1
2
6
B2
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
-65° to +200°C
+150°C
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
1
C1
B1
E1
E2
B2
7
C2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS350 LS351 LS352
Collector to Base Voltage
25
45
60
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
h
FE
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Collector to Emitter Voltage
Emitter to Base Voltage
Collector to Collector Voltage
DC Current Gain
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
25
6.2
30
100
100
100
0.5
0.2
0.2
2
2
0.5
200
3
45
6.2
60
150
600
150
600
150
0.5
0.2
0.2
2
2
0.5
200
3
60
6.2
100
200
600
200
600
200
0.5
0.2
0.2
2
2
0.5
200
3
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
UNITS
V
V
V
V
CONDITIONS
I
C
= 10µA
I
C
= 10µA
I
E
= 10µA
I
C
= 10µA
I
C
= 10µA
I
C
= 100µA
I
C
= 1mA,
I
E
= 0
I
B
= 0
I
C
= 0
NOTE 2
I
E
= 0
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
I
B
= 0.1mA
V
CB
= NOTE 3
V
EB
=3V
V
CB
= 5V
V
nA
nA
pF
pF
nA
MHz
dB
I
C
= 1mA
I
E
= 0
I
C
= 0
I
E
= 0
V
CC
= 0
V
CC
= NOTE4
I
C
= 1mA
I
C
= 100µA
BW = 200Hz
f = 1KHz
V
CE
= 5V
V
CE
= 5V
R
G
= 10 KΩ
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Base Emitter Voltage Differential
|V
BE1
-V
BE2
|
∆|(V
BE1
-V
BE2
)|/°C
|I
B1
- I
B2
|
|∆(I
B1
- I
B2
)|/°C
h
FE1
/h
FE2
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
Base Current Differential
Change with Temperature
DC Current Gain Differential
LS350
1
5
2
20
LS351
0.4
1.0
1
10
5
0.5
LS352
0.2
0.5
0.5
2
5
0.3
UNITS
TYP.
mV
MAX.
mV
TYP.
MAX.
MAX.
MAX.
µV/°C
µV/°C
nA
nA/°C
CONDITIONS
I
C
= 10
µA
I
C
=
10
µA
I = 10µA
C
C
V
CE
= 5V
V
CE
= 5V
V
V
= 5V
= 5V
T
A
= -55°C to +125°C
CE
CE
I = 10
µA,
I = 10µA
C
T
A
= -55°C to +125°C
10
5
5
TYP.
%
V
CE
= 5V
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.100
2 3 4
1
5
8 7 6
P-DIP
0.320
(8.13)
0.290
(7.37)
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
6 LEADS
0.019 DIA.
0.016
0.100
0.500 MIN.
0.050
2 3 4
1
8
5
6
7
SOIC
0.150
(3.81)
0.158
(4.01)
0.100
45°
0.046
0.036
45°
0.048
0.028
0.028
0.034
C1
0.188
(4.78)
B1
0.197
(5.00)
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.228
(5.79)
0.244
(6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10
µA.
3. For LS350: V
CB
= 20V; for LS351 & LS352: V
CB
= 30V.
4. For LS351: V
CC
=
±45V;
for LS352: V
CC
=
±80V;
for LS350: V
CC
=
±25V.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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