PD - 95387
IRLL014PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
l
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Logic-Level Gate Drive
R
DS
(on) Specified at V
GS
=4V & 5V
Fast Switching
Ease of Paralleling
Lead-Free
D
V
DSS
= 60V
R
DS(on)
= 0.20Ω
G
S
I
D
= 2.7A
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
SOT-223
Absolute Maximum Ratings
Parameter
I
D
@ Tc = 25°C
I
D
@ Tc = 100°C
I
DM
P
D
@Tc = 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10 V
Continuous Drain Current, V
GS
@ 10 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
Max.
2.7
1.7
22
3.1
2.0
0.025
0.017
-/+10
100
2.7
0.31
4.5
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-PCB
Junction-to-Ambient. (PCB Mount)**
Typ.
–––
–––
Max.
40
60
Units
°C/W
** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
1
06/10/04
IRLL014PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
60
–––
–––
–––
1.0
3.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––
–––
–––
–––
–––
–––
Typ.
–––
0.073
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.3
110
17
26
4.0
6.0
400
170
42
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.20
V
GS
= 5.0V, I
D
= 1.6A
0.28
Ω
V
GS
= 4.0V, I
D
= 1.4A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 1.6 A
25
V
DS
= 60V, V
GS
= 0V
µA
250
V
DS
= 48V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 10V
nA
-100
V
GS
= -10V
8.4
I
D
= 10A
3.5
nC V
DS
= 48V
6.0
V
GS
= 5.0V, See Fig. 6 and 13
–––
V
DD
= 30V
–––
I
D
= 10A
ns
–––
R
G
= 12
Ω
–––
R
D
= 2.8
Ω,
See Fig. 10
–––
–––
–––
–––
–––
pF
nH
Between lead, 6mm(0.25in)
from package and center
of die contact.
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
2.7
showing the
A
integral reverse
22
p-n junction diode.
––– ––– 1.6
V
T
J
= 25°C, I
S
= 2.7A, V
GS
= 0V
––– 65 130
ns
T
J
= 25°C, I
F
= 10A
––– 0.33 0.65
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
10A,
di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
V
DD=
25V, starting T
J
= 25°C, L =16 mH
R
G
= 25Ω, I
AS
= 2.7A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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