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DTA114YKA

Description
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size59KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric View All

DTA114YKA Overview

100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

DTA114YKA Parametric

Parameter NameAttribute value
MakerLRC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.07 A
Minimum DC current gain (hFE)68
Number of components1
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON
LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
• Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see equiva-
lent circuit).
2) The bias resistors consist of thinfilm resistors with complete
isolation to allow positive biasing of the input. They also have
the advantage of almost completely eliminating parasitic
effects.
3) Only the on/ off conditions need to be set for operation, mak-
ing device design easy.
• Structure
PNP digital transistor (Built-in resistors type)
•Equivalent circuit
(1)
DTA114YKA
2.9 + 0.2
1.9+ 0.2
0.95+0.95
(2)
2.8+ 0.2
+ 0.2
- 0.1
1.1
+ 0.2
- 0.1
0.8 + 0.1
0 ~ 0.1
IN
R1
R2
OUT
(3)
1.6
GND(+)
IN
OUT
GND(+)
0.4
+ 0.1
- 0.05
0.15
+ 0.1
- 0.06
All terminals have same dimensions
EIAJ: SC— 59
Absolute maximum ratings(T
a
=25 °C)
Parameter
symbol
V
cc
V
IN
I
O
I
C(Max.)
P
d
T
j
T
stg
a
limits
–50
–40~+6
–70
–100
200
150
–55~+150
unit
V
V
mA
mW
°C
°C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Elecrical characteristics(T =25°C)
Parameter
Input voltage
Output Voltage
Input current
Output current
symbol
V
I(off)
Min.
–1.4
68
7
3.7
Typ.
–0.1
10
4.7
250
Max.
–0.3
–0.3
–0.88
–0.5
13
5.7
Unit
V
V
mA
Conditions
V
CC
= – 5V,I
O
= –100
µ
A
V
O
= – 0.3V,I
O
=–1mA
I
O
/I
I
=–5mA/–0.25mA
V
I
= – 5V
V
CC
=– 50V,V
I
= 0 V
V
O
= – 5V,I
O
=– 5mA
V
CE
= –10V,I
E
= 5 mA,f=100MHz*
V
I(on)
V
O(on)
I
I
I
O(off)
µ
A
KΩ
MHz
DC current gain
G
I
Input resistance
R
1
Resistance ratio
R
2
/ R
1
Transition frequency
f
T
*Transition frequency of the device
0.3 ~ 0.6
(1) GND
(2) IN
(3) OUT
P4–1/2

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