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DTA114Y

Description
PNP SILICON BIAS RESISTOR TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size106KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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DTA114Y Overview

PNP SILICON BIAS RESISTOR TRANSISTOR

DTA114Y Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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