TP2502
Low Threshold
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
-20V
*
Same as SOT-89.
†
R
DS(ON)
(max)
2.0Ω
V
GS(th)
(max)
-2.4V
I
D(ON)
(min)
-2.0A
Order Number / Package
TO-243AA*
TP2502N8
Die
†
TP2502ND
Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
Product marking for TO-243AA
Features
❏
Low threshold — -2.4V max.
❏
High input impedance
❏
Low input capacitance — 125pF max.
❏
Fast switching speeds
❏
Low on resistance
❏
Free from secondary breakdown
❏
Low input and output leakage
❏
Complementary N- and P-channel devices
TP5L❋
Where
❋
= 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) power
transistors utilize a vertical DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
❏
Logic level interfaces – ideal for TTL and CMOS
❏
Solid state relays
❏
Battery operated systems
❏
Photo voltaic drives
❏
Analog switches
❏
General purpose line drivers
❏
Telecom switches
Package Option
D
G
D
S
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
11/12/01
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
TO-243AA
(SOT-89)
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TP2502
Thermal Characteristics
Package
I
D
(continuous)*
-630mA
I
D
(pulsed)
-3.3A
Power Dissipation
@ T
A
= 25
°
C
TO-243AA
†
θ
jc
θ
ja
I
DR
*
-630mA
I
DRM
-3.3A
°
C/W
15
°
C/W
78
†
1.6W
†
* I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
-20
-1.0
3.0
-2.4
4.5
-100
-100
-10
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= -2.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= -5.0V, V
DS
= -15V
V
GS
= -10V, V
DS
= -15V
V
GS
= -5.0V, I
D
= -250mA
V
GS
= -10V, I
D
= -1.0A
V
GS
= -10V, I
D
= -1.0A
V
DS
= -15V, I
D
= -1.0A
V
GS
= 0V, V
DS
= -20V
f = 1.0 MHz
ON-State Drain Current
-0.4
-2.0
-0.7
-3.3
2.0
1.5
0.75
3.5
2.0
1.2
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.3
Ω
%/°C
0.65
125
70
25
10
11
15
12
-1.3
300
-2.0
pF
ns
ns
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE
GENERATOR
90%
t
(ON)
R
gen
t
(OFF)
t
r
t
d(OFF)
t
F
INPUT
t
d(ON)
0V
90%
OUTPUT
V
DD
90%
10%
10%
2
Ω
V
V
DD
= -20V,
I
D
= -1.0A,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= -1.5A
V
GS
= 0V, I
SD
= -1.5A
D.U.T.
OUTPUT
R
L
V
DD
TP2502
Typical Performance Curves
Output Characteristics
-5
-5
Saturation Characteristics
-4
-4
I
D
(amperes)
-3
I
D
(amperes)
V
GS
=
-10V
-9V
V
GS
= -10V
-3
-9V
-2
-8V
-7V
-1
-6V
-5V
-4V
-3V
0
-2
-4
-6
-8
-10
-2
-8V
-7V
-1
-6V
-5V
0
0
-10
-20
-4V
-3V
-30
-40
0
V
DS
(volts)
Transconductance vs. Drain Current
1.0
2.0
V
DS
(volts)
Power Dissipation vs. Ambient Temperature
V
DS
= -15V
TO-243AA
0.8
1.6
G
FS
(siemens)
T
A
= -55°C
T
A
= 25°C
0.4
T
A
= 150°C
0.2
P
D
(watts)
0.6
1.2
0.8
0.4
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
-10
TO-243AA(pulsed)
1.0
T
A
(°C)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
I
D
(amperes)
-1.0
TO-243AA (DC)
0.6
T
A
= 25°C
-0.1
0.4
0.2
TO-243AA
T
A
= 25°C
P
D
= 1.6W
-0.01
-0.1
0
-1.0
-10
-100
0.001
0.01
0.1
1
10
V
DS
(volts)
t
p
(seconds)
3
TP2502
Typical Performance Curves
BV
DSS
Variation with Temperature
1.1
5
On-Resistance vs. Drain Current
4
V
GS
= -5V
V
GS
= -10V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
-50
0
50
100
150
3
1.0
2
1
0.9
0
0
-1
-2
-3
-4
-5
T
j
(°C)
Transfer Characteristics
-5
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.0
1.4
V
DS
= -15V
-4
R
DS (ON)
@ -10V, -1A
1.6
V
GS(th)
(normalized)
1.2
I
D
(amperes)
-3
T
A
= -55°C
V
(th)
@ -1mA
1.2
1.0
0.8
0.8
0.4
0.6
-2
25°C
150°C
-1
0
0
-2
-4
-6
-8
-10
-50
0
50
100
150
0
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
200
-10
T
j
(°C)
Gate Drive Dynamic Characteristics
f = 1MHz
-8
150
200 pF
V
DS
= -10V
C (picofarads)
V
GS
(volts)
-6
100
C
ISS
C
OSS
-4
V
DS
= -40V
50
-2
80 pF
C
RSS
0
0
-10
-20
-30
-40
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
(volts)
Q
G
(nanocoulombs)
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
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