DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD45128163-I-E
128M-bit Synchronous DRAM
4-bank, LVTTL
WTR (Wide Temperature Range)
Description
The
µ
PD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as
2,097,152
×
16
×
4 (word
×
bit
×
bank).
The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAM is compatible with Low Voltage TTL (LVTTL).
This product is packaged in 54-pin TSOP (II).
Features
•
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
•
Pulsed interface
•
Possible to assert random column address in every cycle
•
Quad internal banks controlled by BA0(A13) and BA1(A12)
•
Byte control by LDQM and UDQM
•
Programmable Wrap sequence (Sequential / Interleave)
•
Programmable burst length (1, 2, 4, 8 and full page)
•
Programmable /CAS latency (2 and 3)
•
Ambient temperature (T
A
):
−40
to + 85°C
•
Automatic precharge and controlled precharge
•
CBR (Auto) refresh and self refresh
• ×16
organization
•
Single 3.3 V
±
0.3 V power supply
•
LVTTL compatible inputs and outputs
•
4,096 refresh cycles / 64 ms
•
Burst termination by Burst stop command and Precharge command
•
TSOP (II) package with lead free solder (Sn-Bi)
RoHS compliant
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0729N10 (Ver.1.0)
Date Published June 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2005
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
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