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H01N60SI

Description
600V 1A N-channel power field effect transistor
CategoryDiscrete semiconductor   
File Size162KB,6 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

H01N60SI Overview

600V 1A N-channel power field effect transistor

Features

Product Name: 600V 1A N-channel power field effect transistor


N-Channel Power Field Effect Transistor


Product model: H01N60SI



Product Description:


The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.



product features:


1A,600V,RDS(ON)=12Ω@VGS=10V


Low Gate Charge 15nC(Typ.)


Low Crss 4pF(Typ.)


Fast Switching


Improved dv/dt Capability



parameter:


Channel: N


VDSS voltage: 600V


ID Current: 1A


VGS start voltage: ±30V


RDS (on) Max. on-resistance: 12ohm


RDS(on) @VGS : 10V


RDS(on) @ID:0.6A


ROSH: PF (lead-free)


Package:TO-251


H01N60SI Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200501
Issued Date : 2005.01.01
Revised Date : 2010.11.10
Page No. : 1/6
H01N60S Series
N-Channel Power Field Effect Transistor
H01N60S Series Pin Assignment
3-Lead Plastic
TO-92
Package Code: A
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
12
Tab
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
3
3-Lead Plastic
TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
Tab
2
3
1
2
3
3-Lead Plastic
TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Features
1A, 600V, R
DS(on)
=12Ω@V
GS
=10V
Low Gate Charge 15nC(Typ.)
Low C
rss
4pF(Typ.)
Fast Switching
Improved d
v
/d
t
Capability
H01N60S Series
Symbol:
G
D
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
j
, T
stg
T
L
Drain-Source Voltage
Drain Current (Continuous T
C
=25
o
C)
Drain Current (Continuous T
C
=100
o
C)
Drain Current (Pulsed)
*1
Gate-Source Voltage
Single Pulse Avalanche Energy
(L=59mH, I
AS
=1.1A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C)
Avalanche Current
*1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
*2
Total Power Dissipation (T
A
=25
o
C)
Total Power Dissipation (T
C
=25
o
C)
Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds
1
3
0.22
-55 to +150
300
Parameter
H01N60SA
H01N60SI /
H01N60SJ
1
0.6
4
±30
50
1
2.8
4.5
2.5
28
Units
V
A
A
A
V
mJ
A
mJ
V/nS
W
W
W/°C
°C
°C
600
*1: Repetitive Rating : Pulse width limited by maximum junction temperature
o
*2: I
SD
≤1.1A,
di/dt≤200A/us, V
DD
≤BV
DSS
, Starting TJ=25 C
H01N60SI, H01N60SJ
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