IS61C5128AS-25QI datasheet, PDF

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IS61C5128AS-25QI: Description512k x 8 high-speed cmos static ram; Categorystorage storage; File Size282KB，19 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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IS61C5128AS-25QI Overview

512k x 8 high-speed cmos static ram

IS61C5128AS-25QI Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	SOIC
package instruction	SOP, SOP32,.56
Contacts	32
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	20.445 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP32,.56
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	3 mm
Maximum standby current	0.0009 A
Minimum standby current	2.9 V
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11.305 mm

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IS61C5128AL/AS

IS64C5128AL/AS

512K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

HIGH SPEED: (IS61/64C5128AL)

• High-speed access time: 10ns, 12 ns

• Low Active Power: 150 mW (typical)

• Low Standby Power: 10 mW (typical)

CMOS standby

LOW POWER: (IS61/64C5128AS)

• High-speed access time: 25ns

• Low Active Power: 75 mW (typical)

• Low Standby Power: 1 mW (typical)

CMOS standby

• TTL compatible interface levels

• Single 5V ± 10% power supply

• Fully static operation: no clock or refresh

required

• Available in 36-pin SOJ (400-mil), 32-pin

sTSOP-I, 32-pin SOP, 44-pin TSOP-II and 32-

pin TSOP-II packages

• Commercial, Industrial and Automotive tempera-

ture ranges available

• Lead-free available

MARCH 2008

DESCRIPTION

The

ISSI

IS61C5128AL/AS and IS64C5128AL/AS are high-

speed,

4,194,304-bit

static RAMs organized as 524,288

words by 8 bits. They are fabricated using

ISSI

's high-

performance CMOS technology. This highly reliable process

coupled with innovative circuit design techniques, yields

access times as fast as 12 ns with low power consumption.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be reduced

down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs,

and

OE.

The active LOW Write

Enable (WE) controls both writing and reading of the memory.

A data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

The IS61C5128AL/AS and IS64C5128AL/AS are packaged

in the JEDEC standard 36-pin SOJ (400-mil), 32-pin sTSOP-

I, 32-pin SOP, 44-pin TSOP-II and 32-pin TSOP-II packages

FUNCTIONAL BLOCK DIAGRAM

A0-A18

DECODER

512K X 8

MEMORY ARRAY

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CONTROL

CIRCUIT

Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. B

03/04/2008

IS61C5128AS-25QI Related Products

	IS61C5128AS-25QI	IS61C5128AS-25HLI	IS61C5128AS-25TI	IS61C5128AS-25QLI	IS61C5128AS-25HI	IS61C5128AS-25TLI
Description	512k x 8 high-speed cmos static ram	512k x 8 high-speed cmos static ram	512k x 8 high-speed cmos static ram	512k x 8 high-speed cmos static ram	512k x 8 high-speed cmos static ram	512k x 8 high-speed cmos static ram
Is it lead-free?	Contains lead	Lead free	Contains lead	Lead free	Contains lead	Lead free
Is it Rohs certified?	incompatible	conform to	incompatible	conform to	incompatible	conform to
Parts packaging code	SOIC	TSOP1	TSOP2	SOIC	TSOP1	TSOP2
package instruction	SOP, SOP32,.56	TSOP1, TSSOP32,.56,20	PLASTIC, TSOP2-44	SOP, SOP32,.56	PLASTIC, STSOP1-32	TSOP2, TSOP32,.46
Contacts	32	32	44	32	32	44
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	25 ns	25 ns	25 ns	25 ns	25 ns	25 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G32	R-PDSO-G32	R-PDSO-G44	R-PDSO-G32	R-PDSO-G32	R-PDSO-G44
JESD-609 code	e0	e3	e0	e3	e0	e3
length	20.445 mm	11.8 mm	18.415 mm	20.445 mm	11.8 mm	18.415 mm
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	32	32	44	32	32	44
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	TSOP1	TSOP2	SOP	TSOP1	TSOP2
Encapsulate equivalent code	SOP32,.56	TSSOP32,.56,20	TSOP32,.46	SOP32,.56	TSSOP32,.56,20	TSOP32,.46
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	NOT SPECIFIED	260	NOT SPECIFIED	260
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3 mm	1.25 mm	1.2 mm	3 mm	1.25 mm	1.2 mm
Maximum standby current	0.0009 A	0.0009 A	0.0009 A	0.0009 A	0.0009 A	0.0009 A
Minimum standby current	2.9 V	2.9 V	2.9 V	2.9 V	2.9 V	2.9 V
Maximum slew rate	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - annealed	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - annealed	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - annealed
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	1.27 mm	0.5 mm	0.8 mm	1.27 mm	0.5 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	40	NOT SPECIFIED	40	NOT SPECIFIED	40
width	11.305 mm	8 mm	10.16 mm	11.305 mm	8 mm	10.16 mm
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )
Humidity sensitivity level	3	-	3	3	-	3
Base Number Matches	-	1	-	1	1	1

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