EIC7179-5
UPDATED 08/21/2007
7.10-7.90GHz
5-Watt Internally-Matched Power FET
FEATURES
•
•
•
•
•
•
•
7.10–7.90GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
-46 dBc IM3 at PO = 25.5 dBm SCL
100% Tested for DC, RF, and R
TH
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
Id
1dB
IM3
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression f = 7.10-7.90GHz
V
DS
= 10 V, I
DSQ
≈
1600mA
Gain at 1dB Compression
f = 7.10-7.90GHz
V
DS
= 10 V, I
DSQ
≈
1600mA
Gain Flatness
f = 7.10-7.90GHz
V
DS
= 10 V, I
DSQ
≈
1600mA
Power Added Efficiency at 1dB Compression
V
DS
= 10 V, I
DSQ
≈
1600mA
f = 7.10-7.90GHz
Drain Current at 1dB Compression f = 7.10-7.90GHz
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 7.90GHz
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage
Thermal Resistance
3
V
DS
= 3 V, I
DS
= 30 mA
Caution! ESD sensitive device.
MIN
36.5
7.5
TYP
37.5
8.5
±0.6
35
1600
-43
-46
2900
-2.5
5.0
3500
-4.0
5.5
o
MAX
UNITS
dBm
dB
dB
%
2000
mA
dBc
mA
V
C/W
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE
1
15V
-5V
68mA
-13.6mA
37dBm
175C
-65C to +175C
27W
CONTINUOUS
2
10V
-4V
20.4mA
-3.4mA
@ 3dB Compression
175C
-65C to +175C
27W
Vds
Vgs
Igf
Igr
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised October 2007
EIC7179-5
UPDATED 08/21/2007
7.10-7.90GHz
5-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package)
V
DS
= 10 V, I
DSQ
≈
1600mA
S11 and S22
6
0.
Swp Max
8.5GHz
2.
0
1.0
0.8
20
S21 and S12
-1.0
-0.8
-0
.
-4
-10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
-0
.4
0.
-0
S[2,2] *
EIC7179-5
-0.8
0.8
.0
-2
.6
-1.0
FREQ
(GHz)
--- S11 ---
MAG
ANG
6.25
6.50
6.75
7.00
7.25
7.50
7.75
8.00
8.25
8.50
8.75
0.752
0.711
0.659
0.591
0.487
0.320
0.097
0.315
0.600
0.769
0.843
168.140
136.260
105.510
75.820
46.300
11.650
-69.360
154.860
114.000
85.120
64.260
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
-3
.0
S[1,1] *
EIC7179-5
2.
0
4
Swp Min
6.5GHz
-4
.0
-5.
0
2
-0.
4.
-10.0
2
-0.
-5.
0
5.0
S21 and S12 (dB)
.0
4
-3
.0
.
-0
.0
-2
6
0.
4
0
3.
10
4.
0
10.0
0
DB(|S[2,1]|) *
EIC7179-5
DB(|S[1,2]|) *
EIC7179-5
0
3.
5.0
0
0.2
10.0
10.0
5.0
4.0
3.0
2.0
1.0
1.0
0.8
0.6
0.4
0.
6
0.2
0.2
0
-10
-20
-30
6.5
7
7.5
Frequency (GHz)
8
8.5
--- S21 ---
MAG
ANG
--- S12 ---
MAG
ANG
--- S22 ---
MAG
ANG
2.901
2.974
3.004
2.986
3.063
3.161
3.168
2.860
2.233
1.607
1.123
-7.820
-39.130
-70.350
-100.630
-131.620
-165.600
156.190
113.990
73.400
38.360
9.490
0.073
0.081
0.088
0.096
0.103
0.111
0.116
0.108
0.087
0.063
0.046
-64.840
-97.090
-127.140
-156.850
172.760
140.350
103.520
62.710
23.160
-9.110
-36.130
0.232
0.224
0.267
0.322
0.358
0.377
0.364
0.326
0.323
0.379
0.455
-147.530
159.760
117.460
82.450
53.770
21.450
-18.780
-72.420
-131.860
-178.690
151.440
page 2 of 4
Revised October 2007
EIC7179-5
UPDATED 08/21/2007
7.10-7.90GHz
5-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
30
THIRD-ORDER
INTERCEPT POINT IP3
25
Total Power Dissipation (W)
Potentially Unsafe
Operating Region
IP
3
= Pout + IM3/2
f1 or f2
20
Pout [S.C.L.] (dBm)
Pout
Pin
IM3
15
Safe Operating
Region
10
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
5
(2f2 - f1) or (2f1 - f2)
0
0
25
50
75
100
125
Case Temperature (°C)
150
175
Pin [S.C.L.] (dBm)
Typical Power Data (V
DS
= 10 V, I
DSQ
= 1600 mA)
40
39
P-1dB (dBm)
Typical IM3 Data (V
DS
= 10 V,
I
DSQ
≈
65% IDSS
)
12
11
G-1dB (dB)
P-1dB & G-1dB vs Frequency
IM3 vs Output Power
-10
-20
f1 = 7.90 GHz, f2 = 7.91 GHz
38
P-1dB (dBm)
37
36
35
7.0
7.2
7.4
7.6
7.8
8.0
Frequency (GHz)
10
G-1dB (dB)
9
8
7
IM3 (dBc)
-30
-40
-50
-60
IM3 (dBc)
-70
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 3 of 4
Revised October 2007
EIC7179-5
UPDATED 08/21/2007
7.10-7.90GHz
5-Watt Internally-Matched Power FET
PACKAGES OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
EIC7179-5 (Hermetic)
EIC7179-5NH (Non-Hermetic)
Excelics
EIC7179-5
.827±.010 .669
.120 MIN
.024
.421
Excelics
EIC7179-5NH
YYWW
SN
.120 MIN
YYWW
SN
.125
.508±.008
.442
.168±.010
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
Caution! ESD sensitive device.
ORDERING INFORMATION
Part Number
EIC7179-5
EIC7179-5NH
Notes:
Packages
Hermetic
Non-Hermetic
Grade
1
Industrial
Industrial
f
Test
(GHz)
7.10-7.90GHz
7.10-7.90GHz
P
1dB
(min)
36.5
36.5
IM
3
(min)
2
-43
-43
1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in “Electrical Characteristics” table.
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 4 of 4
Revised October 2007
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