LED - Lamp
15.11.2007
Radiation
Infrared
Type
MQW
Technology
InGaAs/InP
ELD-1550-525
rev. 04
Case
5 mm plastic lens
Description
High-power, high-speed infrared LED in standard
5 mm package, housing without standoff leads
8,6
1
Anode
5,75
- 0,3
0,8
- 0,4
Note: Special packages with standoff available on request
2,54
Applications
1,5
36,5
± 1,0
0,6
- 0,2
Ø5
Optical communications, safety equipment,
automation
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
t
≤
5 s, 3 mm from case
(t
P
≤
50 µs, t
P
/T = 1/2)
Test
сonditions
Symbol
I
F
I
FM
P
D
T
amb
T
stg
T
sd
Value
100
200
150
-20 to +80
-55 to +100
260
Unit
mA
mA
mW
°C
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
I
F
= 20 mA
Forward voltage
Forward voltage*
Reverse voltage
Radiant power
Radiant power*
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
*for information only
I
F
= 100 mA
I
R
= 100 µA
I
F
= 20 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
Symbol
V
F
V
F
V
R
Φ
e
Φ
e
λ
p
∆λ
0.5
ϕ
t
r,
t
f
5
1,1
1,4
5,0
Min
Typ
Max
Unit
V
V
V
mW
mW
0.75
0,85
0.9
1530
1550
130
20
10
1570
nm
nm
deg.
ns
Note: All measurements carried out on
EPIGAP
equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
京公网安备 11010802033920号
EEWORLD
