LED - Chip
07.01.2008
Radiation
Green
Type
Standard
Technology
GaP/GaP
ELС-550-10
rev. 04
Electrodes
P (anode) up
235
117
typ. dimensions (µm)
typ. thickness
270 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
structured, 25% covered
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Reverse voltage
Luminous intensity
1
Luminous intensity
2
Peak wavelength
Dominant wavelength
Spectral bandwidth at 50%
1
2
Symbol
V
F
V
R
I
V
I
V
λ
P
λ
D
∆λ
0.5
Min
Typ
2.15
Max
2.4
Unit
V
V
I
F
= 20 mA
I
R
= 10 µA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
5
1.1
1.4
2.2
540
550
557
24
560
mcd
mcd
nm
nm
nm
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Measured on epoxy covered chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-550-10
Lot N°
Ι
V
(typ) [mcd]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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EEWORLD
