LED - Chip
Preliminary
Radiation
Infrared
Type
DH
10.04.2007
Technology
AlGaAs/GaAs
ELС-935-17
rev. 05/06
Electrodes
P (anode) up
360
120
typ. dimensions (µm)
typ. thickness
260 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm,
dotted, 25% covered
LED-14
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power*
Radiant power*
Peak wavelength
Spectral bandwidth at 50%
Switching time
*
Symbol
Min
Typ
Max
Unit
I
F
= 20 mA
I
R
= 100 µA
I
F
= 20 mA
I
F
= 50 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
V
F
V
R
Φ
e
Φ
e
λ
p
∆λ
0.5
t
r
, t
f
5
1.2
3.0
920
1.2
1.4
V
V
1.7
4.2
935
50
600
950
mW
mW
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-935-17
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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