APM2313
P-Channel Enhancement Mode MOSFET
Features
•
•
•
•
-20V/-1.8A , R
DS(ON)
=108mΩ(typ.) @ V
GS
=-4.5V
R
DS(ON)
=135mΩ(typ.) @ V
GS
=-2.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SOT-23 Package
Pin Description
D
G
S
Top View of SOT-23
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G
S
Ordering and Marking Information
A P M 23 13
H andling C ode
T em p. R an ge
Package Code
D
P-Channel MOSFET
Package Code
A : S O T -23
O perating Junction T em p. R ange
C : -55 to 1 50
°
C
H andling C ode
T R : T ape & R eel
A P M 2313 A :
M 13X
X - D ate C ode
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
-20
±10
-1.8
-7
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain
the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
1
www.anpec.com.tw
APM2313
Absolute Maximum Ratings (Cont.)
Symbol
P
D
Parameter
Maximum Power Dissipation
T
A
=25°C
T
A
=100°C
T
J
T
STG
R
θjA
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
(T
A
= 25°C unless otherwise noted)
Rating
1.25
0.5
150
-55 to 150
100
W
°C
°C
°C/W
Unit
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
SD
a
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
APM2313
Min.
Typ.
Max.
Test Condition
Unit
V
GS
=0V , I
DS
=-250
µ
A
V
DS
=-16V , V
GS
=0V
V
DS
=V
GS
, I
DS
=-250
µ
A
V
GS
=
±
10V , V
DS
=0V
V
GS
=-4.5V , I
DS
=-1.8A
V
GS
=-2.5V , I
DS
=-0.8A
I
SD
=-0.5A , V
GS
=0V
V
DS
=-10V , I
DS
= -1.8A ,
V
GS
=-4.5V
-20
-1
-0.5
-0.7
108
135
-0.8
5.3
1.04
0.62
8
16
15
35
15
-1
±
100
140
175
-1.3
7
V
µ
A
V
nA
m
Ω
V
Dynamic
b
Q
g
Total Gate Charge
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
nC
V
DD
=-10V , I
DS
=-1A ,
V
GEN
=-4.5V , R
G
=6
Ω
V
GS
=0V
V
DS
=-15V
7
18
8
435
120
65
ns
pF
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a
b
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
2
www.anpec.com.tw
APM2313
Typical Characteristics
Output Characteristics
7
6
-V
GS
=3,4,5,6,7,8,9,10V
Transfer Characteristics
7
6
-I
D
-Drain Current (A)
5
4
3
2
1
-I
D-
Drain Current (A)
-V
GS
=2V
5
4
3
2
T
J
=125°C
T
J
=25°C
1
-V
GS
=1V
T
J
=-55°C
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.75
-I
DS
=250µA
On-Resistance vs. Drain Current
0.18
0.17
-V
GS(th)-
Threshold Voltage (V)
(Normalized)
R
DS(ON)
-On-Resistance (Ω)
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50
0.16
0.15
0.14
0.13
0.12
0.11
0.10
0.09
-V
GS
=2.5V
-V
GS
=4.5V
-25
0
25
50
75
100 125 150
0.08
0
1
2
3
4
5
6
7
Tj - Junction Temperature (°C)
-I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
3
www.anpec.com.tw
APM2313
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.16
0.15
-I
D
=1.8A
On-Resistance vs. Junction Temperature
2.5
-V
GS
=4.5V
-I
D
=1.8A
R
DS(ON)
-On-Resistance (Ω)
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
1
2
3
4
5
6
7
8
9
10
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100 125 150
-V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
5
600
-V
DS
=10V
-I
D
=1.8A
Capacitance
Frequency=1MHz
-V
GS
-Gate-Source Voltage (V)
4
500
Ciss
Capacitance (pF)
400
300
200
Coss
3
2
1
100
0
Crss
0
0
1
2
3
4
5
6
0
5
10
15
20
Q
G
- Gate Charge (nC)
-V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
4
www.anpec.com.tw
APM2313
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
10
10
Single Pulse Power
-I
S
-Source Current (A)
8
Power (W)
6
1
T
J
=150°C
T
J
=25°C
4
2
0.1
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
0
0.01
0.1
1
10
100
500
-V
SD
-Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=100°C/W
3.T
JM
-T
A
=P
DM
Z
thJA
SINGLE PULSE
D=0.01
0.01
1E-4
1E-3
0.01
0.1
1
10
100
500
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2003
5
www.anpec.com.tw
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