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2SB857

Description
-50V -4A PNP epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size41KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

2SB857 Overview

-50V -4A PNP epitaxial planar transistor

Features

Product Name: -50V -4A PNP Epitaxial Planar Transistor


Product model: 2SB857


Product Description:


Low frequency power amplifier..



parameter:


Type: NPN


BVCEO: -50V


IC: -4A


PD: 40W


hFE: MIN 60


hFE: Max. 320


VCE(sat): Max. -1V


RoHS: PF(lead-free)


Package: TO-220AB


2SB857 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2005.10.07
Page No. : 1/4
HSB857 / 2SB857
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Absolute Maximum Ratings
(T
A
=25°C)
TO-220
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 40 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage........................................................................................................................ -70 V
BV
CEO
Collector to Emitter Voltage..................................................................................................................... -50 V
BV
EBO
Emitter to Base Voltage............................................................................................................................. -5 V
I
C
Collector Current .............................................................................................................................................. -4 A
I
C
Collector Current (I
C
Peak)............................................................................................................................... -8 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
*V
BE(on)
*h
FE1
*h
FE2
f
T
Min.
-70
-50
-5
-
-
-
35
60
-
Typ.
-
-
-
-
-
-
-
-
15
Max.
-
-
-
-1
-0.4
-1
-
320
-
MHz
Unit
V
V
V
uA
V
V
I
C
=-10uA, I
E
=0
I
C
=-50mA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-50V, I
C
=0
I
C
=-2A, I
B
=-0.2A
I
C
=-1A, V
CE
=-4V
I
C
=-0.1A, V
CE
=-4V
I
C
=-1A, V
CE
=-4V
V
CE
=-4V, I
C
=-500mA, f=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of h
FE2
Rank
h
FE
B
60-120
C
100-200
D
160-320
HSB857
HSMC Product Specification
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