npn epitaxial silicon transistor
Parameter Name | Attribute value |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | compliant |
Maximum collector current (IC) | 1 A |
Collector-emitter maximum voltage | 60 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 200 |
JEDEC-95 code | TO-236 |
JESD-30 code | R-PDSO-G3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | NPN |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 160 MHz |
Base Number Matches | 1 |