AP9972GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Single Drive Requirement
▼
Surface Mount Package
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
18mΩ
60A
Description
Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9972GP)
are
available for low-profile applications.
G
D
G D
S
TO-263(S)
TO-220(P)
S
Rating
60
±25
60
38
230
89
0.7
450
30
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
3
Avalanche Current
3
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
1.4
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200803183
AP9972GS/P
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.06
-
-
-
55
-
-
-
32
8
20
11
58
45
80
280
230
1.7
Max. Units
-
-
18
22
3
-
10
25
±100
51
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS
=10V, I
D
=35A
V
GS
=4.5V, I
D
=25A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=35A
V
DS
=60V, V
GS
=0V
V
DS
=48V ,V
GS
=0V
V
GS
=±25V
I
D
=35A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=35A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.86Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3170 5070
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=35A, V
GS
=0V
I
S
=35A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
50
48
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Starting T
j
=25
o
C , V
DD
=30V , L=1mH , R
G
=25Ω , I
AS
=30A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP9972GS/P
200
150
10V
7.0V
I
D
, Drain Current (A)
150
10V
7.0V
I
D
, Drain Current (A)
100
5.0V
100
5.0V
4.5V
4.5V
50
50
T
C
=25 C
0
0
2
4
6
8
10
o
V
G
=3.0V
T
C
= 150 C
o
V
G
=3.0V
0
12
14
0
2
4
6
8
10
12
14
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
I
D
= 25 A
T
C
=25
o
C
18
1.4
I
D
=35A
V
G
=10V
Normalized R
DS(ON)
2
4
6
8
10
R
DS(ON)
(m
Ω
)
1.2
1.0
16
0.8
14
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.7
20
15
T
j
=150 C
I
S
(A)
10
o
T
j
=25 C
o
Normalized V
GS(th)
(V)
1.2
0.7
5
0
0
0.2
0.4
0.6
0.8
1
1.2
0.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9972GS/P
f=1.0MHz
12
10000
I
D
= 35 A
V
GS
, Gate to Source Voltage (V)
10
8
V
DS
=48V
V
DS
=38V
V
DS
=30V
C (pF)
1000
C
iss
6
4
2
C
oss
C
rss
0
0
20
40
60
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
I
D
(A)
100us
1ms
10
0.1
0.1
0.05
P
DM
10ms
T
C
=25 C
Single Pulse
o
t
0.02
T
0.01
100ms
DC
10
100
1000
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1
0.1
1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
V
DS
=5V
80
V
G
o
o
I
D
, Drain Current (A)
T
j
=25 C
60
T
j
=150 C
Q
G
4.5V
Q
GS
Q
GD
40
20
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
E
φ
L2
A
SYMBOLS
Millimeters
MIN
NOM
MAX
L1
A
4.25
0.65
1.15
0.40
1.00
9.70
---
----
12.70
2.60
1.00
2.6
14.70
6.30
3.50
8.40
4.48
0.80
1.38
0.50
1.20
10.00
---
2.54
13.60
2.80
1.40
3.10
15.50
6.50
3.60
8.90
4.70
0.90
1.60
0.60
1.40
10.40
11.50
----
14.50
3.00
1.80
3.6
16
6.70
3.70
9.40
L5
c1
b
b1
c
c1
E
E1
D
L4
e
L
L1
L2
L3
L4
L5
L3
b1
L
φ
D
b
c
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
9972GP
LOGO
YWWSSS
meet Rohs requirement
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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