S1226-18BQ datasheet, PDF - EEWORLD Datasheet

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S1226-18BQ: DescriptionSI photo diode; CategoryLED optoelectronic/LED photoelectric; File Size225KB，4 Pages; ManufacturerHamamatsu; Websitehttp://www.hamamatsu.com; Environmental Compliance

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S1226-18BQ Overview

SI photo diode

S1226-18BQ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Hamamatsu
package instruction	TO-18, 2 PIN
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Configuration	SINGLE
Maximum dark power	0.002 nA
Infrared range	NO
Nominal photocurrent	0.00066 mA
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum operating temperature	60 °C
Minimum operating temperature	-20 °C
peak wavelength	720 nm
Maximum response time	1.5e-7 s
Minimum reverse breakdown voltage	5 V
Maximum reverse voltage	5 V
Semiconductor material	Silicon
shape	ROUND
size	3 mm
surface mount	NO

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PHOTODIODE

Si photodiode

S1226 series

For UV to visible, precision photometry; suppressed IR sensitivity

Features

Applications

High UV sensitivity: QE 75 % (λ=200 nm)

Suppressed IR sensitivity

Low dark current

High reliability

Analytical equipment

Optical measurement equipment, etc.

General ratings / absolute maximum ratings

Type No.

Dimensional

outline/

Window

material *

➀/Q

➀/K

➁/Q

➁/K

➁/Q

➁/K

➂/Q

➂/K

Package

(mm)

TO-18

Active

area size

(mm)

1.1 × 1.1

2.4 × 2.4

TO-5

3.6 × 3.6

TO-8

5.8 × 5.8

Effective

active area

(mm

)

1.2

5.7

Absolute maximum ratings

Operating

Storage

Reverse

temperature

voltage

Topr

Tstg

Max.

(V)

(°C)

-20 to +60

-55 to +80

-40 to +100

-55 to +125

-20 to +60

-55 to +80

-40 to +100

-55 to +125

-20 to +60

-55 to +80

-40 to +100

-55 to +125

-20 to +60

-55 to +80

-40 to +100

-55 to +125

S1226-18BQ

S1226-18BK

S1226-5BQ

S1226-5BK

S1226-44BQ

S1226-44BK

S1226-8BQ

S1226-8BK

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Peak

Spectral sensi-

response tivity

range wave-

length

λp

Photo sensitivity

(A/W)

λp

200 nm

Short circuit

Dark

current

Isc

100

V =10 m V

He-Ne

Min. Typ. Max.

laser

(µA) (µA)

0.5

2.2

4.4

0.66

2.9

5.9

(pA)

1.12

380

950

10 3.6 × 10

-15

Terminal

Temp.

Rise time capaci- Shunt

coeffi-

tance resistance

cient

NEP

=0 V

Rsh

of I

=1 kΩ V

=0 V V

=10 mV

CID

f=10 kHz

Min. Typ.

(times/° C) (µs)

(pF) (GΩ) (GΩ) (W/Hz

1/2

)

0.15

0.5

160

50 1.6 × 10

-15

20 2.5 × 10

-15

Type No.

Min. Typ. 633 nm

(nm)

190 to 1000

S1226-18BQ

0.10 0.12

320 to 1000

S1226-18BK

190 to 1000

S1226-5BQ

0.10 0.12

320 to 1000

S1226-5BK

720 0.36

0.34

190 to 1000

S1226-44BQ

0.10 0.12

320 to 1000

S1226-44BK

190 to 1000

S1226-8BQ

0.10 0.12

320 to 1000

S1226-8BK

* Window material, K: borosilicate glass, Q: quartz glass

0.5 5 5.0 × 10

-15

S1226-18BQ Related Products

	S1226-18BQ	S1226-8BK	S1226-8BQ	S1226-5BQ	S1226-18BK	S1226	S1226-44BQ	S1226-5BK	S1226-44BK
Description	SI photo diode	SI photo diode	SI photo diode	SI photo diode	SI photo diode	SI photo diode	SI photo diode	SI photo diode	SI photo diode
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	-	conform to	conform to	conform to
Maker	Hamamatsu	Hamamatsu	Hamamatsu	Hamamatsu	Hamamatsu	-	Hamamatsu	Hamamatsu	Hamamatsu
package instruction	TO-18, 2 PIN	TO-8, 2 PIN	TO-8, 2 PIN	TO-5, 2 PIN	TO-18, 2 PIN	-	TO-5, 2 PIN	TO-5, 2 PIN	TO-5, 2 PIN
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	-	unknown	unknown	unknown
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Maximum dark power	0.002 nA	0.02 nA	0.02 nA	0.005 nA	0.002 nA	-	0.01 nA	0.005 nA	0.01 nA
Infrared range	NO	NO	NO	NO	NO	-	NO	NO	NO
Nominal photocurrent	0.00066 mA	0.016 mA	0.016 mA	0.0029 mA	0.00066 mA	-	0.0059 mA	0.0029 mA	0.0059 mA
Installation features	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	-	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT
Number of functions	1	1	1	1	1	-	1	1	1
Maximum operating temperature	60 °C	100 °C	60 °C	60 °C	100 °C	-	60 °C	100 °C	100 °C
Minimum operating temperature	-20 °C	-40 °C	-20 °C	-20 °C	-40 °C	-	-20 °C	-40 °C	-40 °C
peak wavelength	720 nm	720 nm	720 nm	720 nm	720 nm	-	720 nm	720 nm	720 nm
Maximum response time	1.5e-7 s	0.000003 s	0.000003 s	5e-7 s	1.5e-7 s	-	0.000001 s	5e-7 s	0.000001 s
Minimum reverse breakdown voltage	5 V	5 V	5 V	5 V	5 V	-	5 V	5 V	5 V
Maximum reverse voltage	5 V	5 V	5 V	5 V	5 V	-	5 V	5 V	5 V
Semiconductor material	Silicon	Silicon	Silicon	Silicon	Silicon	-	Silicon	Silicon	Silicon
shape	ROUND	ROUND	ROUND	ROUND	ROUND	-	ROUND	ROUND	ROUND
size	3 mm	10.5 mm	10.5 mm	5.9 mm	3 mm	-	5.9 mm	5.9 mm	5.9 mm
surface mount	NO	NO	NO	NO	NO	-	NO	NO	NO

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