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GSD1616A

Description
npn epitaxial planar transistor
File Size200KB,3 Pages
ManufacturerGTM
Websitehttp://www.gtm.com.tw/
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GSD1616A Overview

npn epitaxial planar transistor

ISSUED DATE :2003/10/23
REVISED DATE :2004/11/29B
GSD1616A
Description
Package Dimensions
D
E
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
T
he GSD1616A is designed for audio frequency power amplifier and medium speed switching.
S1
TO-92
A
b1
S E A T IN G
PLANE
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings Ta = 25 :
Parameter
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current*(Pulse)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
VCBO
VCEO
VEBO
IC
IC
Tj
Ts
TG
PD
120
60
6
1
2
+150
-55 ~ +150
750
V
V
V
A
A
mW
Characteristics at Ta = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
ton
ts
tf
Min.
120
60
6
-
-
-
-
600
135
81
100
-
-
-
-
Typ.
-
-
-
-
150
0.9
640
-
-
160
-
0.07
0.95
0.07
Max.
-
-
-
100
100
300
1.2
700
600
-
-
19
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VBE=60V
VBE=6V
lC=1A,IB=50mA
IC=1A, IB=50mA
VCE=2V,IC=50mA
VCE=2V,IC=100mA
VCE=2V,IC=1A
VCE=2V,IC=100mA
VCB=10V ,IE=0,f=1MHz
VCE=10V,IC=100mA
IB1=-IB2=10mA
VBE(off)=2~-3V
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
MHz
pF
uS
uS
uS
Classification of hFE1
Rank
Range
Y
135-270
G
200-400
L
300-600
GSD1616A
Page: 1/3
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