LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis-
tor with a monolithic bias network consisting of two resistors; a series base resistor and a
base-emitter resistor.The BRT eliminates these individual components by integrating them
into a single device. The use of a BRT can reduce both system cost and board space. The
device is housed in the SOT-23 package which is
designed for low power surface mount applications.
∗
Simplifies Circuit Design
∗
Reduces Board Space
∗
Reduces Component Count
∗
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
∗
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
PNP SILICON
BIAS RESISTOR
TRANSISTOR
PIN1
base
(Input)
R1
R2
PIN3
Collector
(output)
1
PIN2
Emitter
(Ground)
2
3
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
A
= 25°C
(1)
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
Value
50
50
100
200
1.6
Value
625
–65 to +150
260
10
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Unit
°C/W
°C
°C
Sec
R2 (K)
10
22
47
47
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
Symbol
R
θ
JA
T
J
, T
stg
T
L
DEVICE MARKING AND RESISTOR VALUES
Device
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
Marking
A6A
A6B
A6C
R1 (K)
10
22
47
MMUN2114LT1
A6D
10
MMUN2115LT1
(2)
A6E
10
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
8
Q1–1/7
LESHAN RADIO COMPANY, LTD.
DEVICE MARKING AND RESISTOR VALUES
(Continued)
Device
MMUN2116RLT1
(2)
MMUN2130RLT1
(2)
MMUN2131RLT1
(2)
MMUN2132RLT1
(2)
MMUN2133RLT1
(2)
MMUN2134RLT1
(2)
Characteristic
Marking
A6F
A6G
A6H
A6J
A6K
A6L
Symbol
I
CBO
I
CEO
I
EBO
R1 (K)
4.7
1.0
2.2
4.7
4.7
22
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
V
(BR)CBO
V
(BR)CEO
h
FE
50
50
35
60
80
80
160
160
3.0
8.0
15
80
V
CE(sat)
80
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
100
140
140
250
250
5.0
15
27
140
130
-
MMUN2111RLT1 SERIES
R2 (K)
1.0
2.2
4.7
47
47
Max
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
-
-
-
-
-
-
-
-
-
-
-
-
0.25
Vdc
Vdc
Vdc
Unit
nAdc
nAdc
mAdc
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=50V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage
(3)
(I
C
=2.0mA, I
B
=0)
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
(3)
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
Collector-Emitter Saturation Voltage (I
C
=10mA, I
E
=0.3mA)
(I
C
= 10 mA, I
B
= 5 mA) MMUN2130RLT1 MMUN2131RLT1
(I
C
= 10 mA, I
B
= 1 mA) MMUN2115RLT1 MMUN2116RLT1
MMUN2132RLT1 MMUN2133RLT1 MMUN2134RLT1
Output Voltage (on)
(V
CC
=5.0V,V
B
=2.5V, R
L
=1.0kΩ)
MMUN2111RLT1
MMUN2112RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
MMUN2113RLT1
V
OL
-
-
-
-
-
-
-
-
-
-
-
8
Vdc
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
(V
CC
=5.0V,V
B
=3.5V, R
L
= 1.0kΩ)
2. New devices. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
2-446 LRC Small-Signal Transistors, FETs and Diodes Device Data
Q1–2/7
LESHAN RADIO COMPANY, LTD.
MMUN2111RLT1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (V
CC
= 5.0V, V
B
= 0.5 V, R
L
= 1.0kΩ)
(V
CC
= 5.0V, V
B
= 0.25 V, R
L
=1.0kΩ)
MMUN2115RLT1
MMUN2116RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2130RLT1
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
Resistor Ratio MMUN2111RLT1 MMUN2112RLT1 MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1 MMUN2116RLT1
MMUN2130RLT1 MMUN2131RLT1 MMUN2132RLT1
MMUN2133RLT1
R
1
/R
2
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
0.8
0.17
—
0.8
0.055
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1.0
0.21
—
1.0
0.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
1.2
0.25
—
1.2
0.185
kΩ
Symbol
V
OH
Min
4.9
Typ
—
Max
—
Unit
Vdc
(V
CC
=5.0 V,V
B
=0.050V,R
L
=1.0kΩ)
Input Resistor
Q1–3/7
LESHAN RADIO COMPANY, LTD.
MMUN2111RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111RLT1
P
D
, POWER DISSIPATION (MILLIWATTS)
250
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
=10
200
T
A
= –25°C
75°C
25°C
150
0.1
100
50
R
θJA
= 625°C/W
0
–50
0
50
10
150
0.01
0
20
40
60
80
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
h
FE
, DC CURRENT GAIN (NORMALIZED)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
1000
4
V
CE
= 10 V
C ob , CAPACITANCE (pF)
f = 1 MHz
l
E
= 0 V
3
T
A
= 25°C
T
A
=75°C
100
25°C
–25°C
2
1
10
1
10
100
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
V
in
, INPUT VOLTAGE (VOLTS)
75°C
25°C
T
A
= –25°C
100
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
10
1
10
T
A
= –25°C
25°C
75°C
0.1
1
0.01
V
O
= 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
0.1
0
10
20
30
40
50
V
in
, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
Q1–4/7
LESHAN RADIO COMPANY, LTD.
MMUN2111RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112RLT1
10
h
FE
, DC CURRENT GAIN (NORMALIZED)
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
I
C
/I
B
=10
T
A
= –25°C
25°C
75°C
1
V
CE
= 10 V
T
A
=75°C
25°C
100
–25°C
0.1
0.01
0
20
40
60
80
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
versus I
C
4
100
Figure 8. DC Current Gain
f = 1 MHz
75°C
25°C
T
A
= –25°C
C ob , CAPACITANCE (pF)
3
l
E
= 0 V
T
A
= 25°C
I
C
, COLLECTOR CURRENT (mA)
10
1
2
0.1
1
0.01
V
O
= 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
0
0
10
20
30
40
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
in
, INPUT VOLTAGE (VOLTS)
V
O
= 0.2 V
T
A
= –25°C
10
25°C
75°C
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Q1–5/7
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