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MBRS10150CT

Description
10.0 amps. surface mount schottky barrier rectifiers
CategoryDiscrete semiconductor    diode   
File Size157KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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MBRS10150CT Overview

10.0 amps. surface mount schottky barrier rectifiers

MBRS10150CT Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PSSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS, UL RECOGNIZED
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Maximum non-repetitive peak forward current120 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
surface mountYES
technologySCHOTTKY
Terminal surfacePURE TIN
Terminal formGULL WING
Terminal locationSINGLE
MBRS1035CT - MBRS10150CT
10.0 AMPS. Surface Mount Schottky Barrier Rectifiers
D
2
PAK
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection
applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
o
260 C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC D PAK molded plastic body
Terminals: Pure tin plated, lead free. solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
2
Dimensions in inches and (millimeters)
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
o
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
I
F
=5.0A, Tc=25
o
C
o
I
F
=5.0A, Tc=125 C
o
I
F
=10A, Tc=25 C
I
F
=10A, Tc=125
o
C
Maximum Instantaneous Reverse Current @ Tc=25 C
o
At Rated DC Blocking voltage (Note 2) @ Tc=125 C
Maximum Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
Notes:
o
Symbol
MBRS MBRS MBRS MBRS MBRS MBRS MBRS
1035
CT
1045
CT
1050
CT
1060
CT
1090 10100 10150
CT
CT
CT
Units
V
V
V
A
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
RRM
V
F
I
R
R
θJC
35
24
35
45
31
45
50
35
50
60
42
60
10
120
1.0
90
63
90
100
70
100
150
105
150
0.70
0.57
0.80
0.67
0.80
0.65
0.90
0.75
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
V
0.1
15
10
2.0
-65 to +150
-65 to +175
5.0
o
mA
mA
T
J
T
STG
C/W
o
C
o
C
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3
. Thermal Resistance from Junction to Case Per Leg.
- 56 -
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