475 A, 3600 V, SILICON, RECTIFIER DIODE
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | International Rectifier ( Infineon ) |
package instruction | O-MUPM-H1 |
Contacts | 1 |
Manufacturer packaging code | CASE B-8 |
Reach Compliance Code | compliant |
Other features | HIGH SURGE CAPABILITY |
application | HIGH VOLTAGE HIGH POWER |
Shell connection | ANODE |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.66 V |
JESD-30 code | O-MUPM-H1 |
JESD-609 code | e0 |
Maximum non-repetitive peak forward current | 7850 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 1 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -40 °C |
Maximum output current | 475 A |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 3600 V |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | HIGH CURRENT CABLE |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |