TRANSISTOR 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN, FET General Purpose Power
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Parts packaging code | SOT |
| package instruction | PLASTIC, SOT-404, 3 PIN |
| Contacts | 3 |
| Manufacturer packaging code | SOT404 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 500 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V |
| Maximum drain current (Abs) (ID) | 75 A |
| Maximum drain current (ID) | 75 A |
| Maximum drain-source on-resistance | 0.008 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 440 pF |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 187 W |
| Maximum power dissipation(Abs) | 187 W |
| Maximum pulsed drain current (IDM) | 240 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 210 ns |
| Maximum opening time (tons) | 145 ns |
| Base Number Matches | 1 |
| BUK7608-55 | BUK7608-55T/R | |
|---|---|---|
| Description | TRANSISTOR 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN, FET General Purpose Power | TRANSISTOR 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
| Is it Rohs certified? | conform to | conform to |
| Reach Compliance Code | not_compliant | unknown |
| ECCN code | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 500 mJ | 500 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V | 55 V |
| Maximum drain current (Abs) (ID) | 75 A | 75 A |
| Maximum drain current (ID) | 75 A | 75 A |
| Maximum drain-source on-resistance | 0.008 Ω | 0.008 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 440 pF | 440 pF |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 187 W | 187 W |
| Maximum power dissipation(Abs) | 187 W | 187 W |
| Maximum pulsed drain current (IDM) | 240 A | 240 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | Matte Tin (Sn) | TIN |
| Terminal form | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Maximum off time (toff) | 210 ns | 210 ns |
| Maximum opening time (tons) | 145 ns | 145 ns |
| Base Number Matches | 1 | 1 |
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