CAT24C44WI datasheet, PDF - EEWORLD Datasheet

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CAT24C44WI: Description16X16 NON-VOLATILE SRAM, 375ns, PDSO8, LEAD FREE, SOIC-8; Categorystorage storage; File Size57KB，9 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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CAT24C44WI Overview

16X16 NON-VOLATILE SRAM, 375ns, PDSO8, LEAD FREE, SOIC-8

CAT24C44WI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ON Semiconductor
Parts packaging code	SOIC
package instruction	SOP,
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	375 ns
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
length	4.9 mm
memory density	256 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	16
Number of functions	1
Number of terminals	8
word count	16 words
character code	16
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16X16
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.75 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	3.9 mm
Base Number Matches	1

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CAT24C44

256-Bit Serial Nonvolatile CMOS Static RAM

FEATURES

Single 5V Supply

Infinite EEPROM to RAM Recall

CMOS and TTL Compatible I/O

Low CMOS Power Consumption:

JEDEC Standard Pinouts:

–8-lead DIP

–8-lead SOIC

100,000 Program/Erase Cycles (EEPROM)

Auto Recall on Power-up

Commercial, Industrial and Automotive

–Active: 3mA Max.

–Standby: 30

A Max.

Power Up/Down Protection

10 Year Data Retention

Temperature Ranges

DESCRIPTION

The CAT24C44 Serial NVRAM is a 256-bit nonvolatile

memory organized as 16 words x 16 bits. The high

speed Static RAM array is bit for bit backed up by a

nonvolatile EEPROM array which allows for easy trans-

fer of data from RAM array to EEPROM (STORE) and

from EEPROM to RAM (RECALL). STORE operations

are completed in 10ms max. and RECALL operations

typically within 1.5µs. The CAT24C44 features unlim-

ited RAM write operations either through external RAM

writes or internal recalls from EEPROM. Internal false

store protection circuitry prohibits STORE operations

when V

is less than 3.5V (typical) ensuring EEPROM

data integrity.

The CAT24C44 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed to

endure 100,000 program/erase cycles (EEPROM) and

has a data retention of 10 years. The device is available

in JEDEC approved 8-lead plastic DIP and SOIC

packages.

PIN CONFIGURATION

DIP Package (L)

PIN FUNCTIONS

Pin Name

SOIC Package ( V)

VCC

STORE

RECALL

VSS

Function

Serial Clock

Serial Input

Serial Data Output

Chip Enable

Recall

Store

+5V

Ground

RECALL

STORE

VCC

STORE SK

RECALL DI

VSS

Characteristics subject to change without notice

Doc. No. MD-1083, Rev. T

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