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KBU603GT0G

Description
Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size201KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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KBU603GT0G Overview

Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN

KBU603GT0G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PSFM-W4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-W4
Maximum non-repetitive peak forward current175 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Base Number Matches1

KBU603GT0G Related Products

KBU603GT0G KBU605GT0 KBU601GT0G KBU602GT0G KBU606GT0 KBU606GT0G
Description Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 6A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 6A, 50V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 6A, 100V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 6A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 6A, 800V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN
package instruction R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 200 V 600 V 50 V 100 V 800 V 800 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4
Maximum non-repetitive peak forward current 175 A 175 A 175 A 175 A 175 A 175 A
Number of components 4 4 4 4 4 4
Phase 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 6 A 6 A 6 A 6 A 6 A 6 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 200 V 600 V 50 V 100 V 800 V 800 V
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor
Base Number Matches 1 1 1 1 1 -
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