DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | SAMSUNG |
Parts packaging code | TSOP2 |
package instruction | TSSOP, TSSOP54,.46,16 |
Contacts | 54 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 0.75 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 133 MHz |
I/O type | COMMON |
interleaved burst length | 2,4,8 |
JESD-30 code | R-PDSO-G54 |
JESD-609 code | e0 |
memory density | 536870912 bit |
Memory IC Type | DDR DRAM |
memory width | 8 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 54 |
word count | 67108864 words |
character code | 64000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 64MX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TSSOP |
Encapsulate equivalent code | TSSOP54,.46,16 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 2.5 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Maximum seat height | 1.2 mm |
self refresh | YES |
Continuous burst length | 2,4,8 |
Maximum standby current | 0.005 A |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal pitch | 0.4 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 10.16 mm |
Base Number Matches | 1 |