Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | TO-247AD |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| Maximum collector current (IC) | 40 A |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | SINGLE |
| JEDEC-95 code | TO-247AD |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 250 |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | MATTE TIN OVER NICKEL |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 228 ns |
| Nominal on time (ton) | 70 ns |
| Base Number Matches | 1 |
| IRGP20B120U-EPPBF | IRGP20B120U-E | |
|---|---|---|
| Description | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | INSULATED GATE BIPOLAR TRANSISTOR |
| Is it Rohs certified? | conform to | incompatible |
| Maker | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| Parts packaging code | TO-247AD | TO-247AD |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | compliant | compli |
| Maximum collector current (IC) | 40 A | 40 A |
| Collector-emitter maximum voltage | 1200 V | 1200 V |
| Configuration | SINGLE | SINGLE |
| JEDEC-95 code | TO-247AD | TO-247AD |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e3 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 250 | 225 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | MATTE TIN OVER NICKEL | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 30 | 30 |
| transistor applications | POWER CONTROL | POWER CONTROL |
| Transistor component materials | SILICON | SILICON |
| Nominal off time (toff) | 228 ns | 228 ns |
| Nominal on time (ton) | 70 ns | 70 ns |
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